SMT Packaged, GaAs MMIC, Sub-Harmonically Pumped Chipset
Mimix Broadband, Inc. provides surface mount technology (SMT) packaged, gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped receiver and transmitter devices. These chips integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier, and a low-noise amplifier for the receiver, and an output amplifier for the transmitter
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•Datasheet: XR1006-QD Receiver
•Datasheet: XU1002-QD Transmitter
Mimix Broadband, Inc. provides surface mount technology (SMT) packaged, gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped receiver and transmitter devices. These chips integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier, and a low-noise amplifier for the receiver, and an output amplifier for the transmitter. The image reject mixer eliminates the need for an image bandpass filter after the amplifier to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these devices cover the 17 to 25 GHz frequency bands. The receiver has a noise figure of 2.5 dB and 20 dB image rejection across the band. The transmitter has a 23 dBm output third order intercept point (OIP3) and 15 dB image rejection across the band.
•Datasheet: XR1006-QD Receiver
•Datasheet: XU1002-QD Transmitter
•Datasheet: XR1006-QD Receiver
•Datasheet: XU1002-QD Transmitter
Mimix Broadband, Inc. provides surface mount technology (SMT) packaged, gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped receiver and transmitter devices. These chips integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier, and a low-noise amplifier for the receiver, and an output amplifier for the transmitter. The image reject mixer eliminates the need for an image bandpass filter after the amplifier to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these devices cover the 17 to 25 GHz frequency bands. The receiver has a noise figure of 2.5 dB and 20 dB image rejection across the band. The transmitter has a 23 dBm output third order intercept point (OIP3) and 15 dB image rejection across the band.
This receiver and transmitter pair, identified as XR1006-QD and XU1002-QD respectively, are suitable for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM, and VSAT applications.
Mimix performs 100% on-wafer RF and DC testing on these products. The devices come in a 7x7 mm QFN surface mount package, offering RF and thermal properties, and the packages are RoHS compliant.
Engineering samples and small production quantities are available today from stock production.
Click Here To Download:
•Datasheet: XR1006-QD Receiver
•Datasheet: XU1002-QD Transmitter
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