semiconductors-ics-products

  1. Thick Film Chip Attenuators 12/19/2006

    Wire and ribbon bondable and Flipchip thick film chip attenuators, printed and fired on 96% alumina. Provides attenuation accuracy for frequencies through 10 Ghz. Double layer terminations provide additional bonding surface. Abrasive trimming ensures optimum resistor stability

  2. XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier 5/11/2007
    Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.
  3. MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier 7/2/2008
    The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and space screening is available.
  4. Thin-Film Directional Couplers (CP0402A1950ENTR) 1/21/2009
    The ITF High Directivity LGA Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency performance and rugged construction for reliable automatic assembly.
  5. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  6. E-pHEMT MMIC - AE314 6/29/2009

    AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.

  7. Silicon MMIC Amplifier (BGA2003 T/R) 1/21/2009
    Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
  8. MMIC (75 ohm) 12/29/2008
    RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
  9. CDMA Cellular Band Front-End Module: AFEM-7750 12/3/2009
    The AFEM-7750 is a fully matched CDMA Front-End Module featuring the integration of Power Amplifier, Duplexer, Band-pass Filter and coupler.
  10. Front End Module: RF3482 2/22/2011
    The RF3482 FEM is a single-chip integrated front end module (FEM) for high-performance WLAN applications in the 2.4GHz to 2.5GHz ISM band.