Thick Film Chip Attenuators
Wire and ribbon bondable and Flipchip thick film chip attenuators, printed and fired on 96% alumina. Provides attenuation accuracy for frequencies through 10 Ghz. Double layer terminations provide additional bonding surface. Abrasive trimming ensures optimum resistor stability
XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point
across much of the band. The device also includes an on-chip temperature compensated output power detector.
MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically
provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and
space screening is available.
Thin-Film Directional Couplers (CP0402A1950ENTR)
The ITF High Directivity LGA Coupler is based on thin-film multilayer
technology. The technology provides a miniature part with excellent high
frequency performance and rugged construction for reliable automatic
XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 37.0-40.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +37.0 dBm
E-pHEMT MMIC - AE314
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
Silicon MMIC Amplifier (BGA2003 T/R)
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
CDMA Cellular Band Front-End Module: AFEM-7750
The AFEM-7750 is a fully matched CDMA Front-End Module featuring the integration of Power Amplifier, Duplexer, Band-pass Filter and coupler.
Front End Module: RF3482
The RF3482 FEM is a single-chip integrated front end module (FEM) for high-performance WLAN applications in the 2.4GHz to 2.5GHz ISM band.