XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
Mimix Broadband's 18 to 36 GHz GaAs MMIC transmitter has a +25.0
dBm output third order intercept across the band. This device is a
balanced resistive pHEMT mixer followed by a distributed amplifier
and includes an integrated LO doubler and LO buffer amplifier
Click Here To Download:
•Datasheet: XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
Mimix Broadband's 18 to 36 GHz GaAs MMIC transmitter has a 25.0 dBm output third order intercept across the band. This device is a balanced resistive pHEMT mixer followed by a distributed amplifier and includes an integrated LO doubler and LO buffer amplifier. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies. IF and IF mixer inputs are provided through an external 180 degree hybrid. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
•Datasheet: XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
•Datasheet: XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
Mimix Broadband's 18 to 36 GHz GaAs MMIC transmitter has a 25.0 dBm output third order intercept across the band. This device is a balanced resistive pHEMT mixer followed by a distributed amplifier and includes an integrated LO doubler and LO buffer amplifier. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies. IF and IF mixer inputs are provided through an external 180 degree hybrid. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Features
- Sub-harmonic Transmitter
- Integrated Mixer, LO Doubler/Buffer & Output Amplifier
- 25.0 dBm Output Third Order Intercept (OIP3)
- 35.0 dB Gain Control
- 2.0 dBm LO Drive Level
- 9.0 dB Conversion Gain
- 100% On-Wafer RF and DC Testing
- 100% Visual Inspection to MIL-STD-883 Method 2010
Click Here To Download:
•Datasheet: XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
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