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XM1003-BD: 32 To 42 GHz GaAs MMIC Image Reject Mixer
2/27/2008
Mimix Broadband’s 32 to 42 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an up or down-converter. The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band
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SMT Packaged GaAs MMIC Receivers
9/6/2006
Mimix Broadband, Inc. provides a family of Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receivers in RoHS-compliant, surface mount technology (SMT) packages, covering 11 to 45 GHz...
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CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier
11/7/2007
Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high
repeatability and uniformity
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XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
6/5/2007
Mimix Broadband’s 18 to 36 GHz GaAs MMIC transmitter has a +25.0
dBm output third order intercept across the band. This device is a
balanced resistive pHEMT mixer followed by a distributed amplifier
and includes an integrated LO doubler and LO buffer amplifier
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CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
6/7/2007
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability
and uniformity
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CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
3/8/2006
The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems
designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output
power at saturation operating from 13.50 to 14.50 GHz frequency...
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XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
6/7/2005
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +38.0 dBm
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High Gain GaAs MMIC Buffer Amplifiers
3/8/2007
Mimix Broadband, Inc. provides two gallium arsenide (GaAs)
monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
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Custom Thin Film Metalized Substrates
12/4/2001
Johanson Technology offers a wide range of dielectrics for use in application specific environments. These materials are available in both lapped and "as fired" condition as well as metalized and non-metalized substrates...