semiconductors-ics-products

  1. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier 3/8/2006
    The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
  2. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier 6/7/2007
    Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
  3. 40REC0382 35.0-45.0 GHz GaAs MMIC Receiver 5/10/2004
    Mimix Broadband's 35.0-45.0 GHz GaAs MMIC receiver has a noise figure of 4.0 dB and 18.0 dB image rejection across the band...
  4. XP1008 11 To 16 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  5. High-Linearity 2.5 GHz Front-End Modules (FEMs) 8/13/2015

    Qorvo presents a new series of high-linearity 2.5 GHz Front-End Modules (FEMs) built for automotive Wi-Fi applications, 802.11b/g/n, and Bluetooth® systems. These devices feature integrated b/g/n power amplifiers, directional power detectors, RX balun, and TX filtering. Each FEM contains an ultra-small form factor and integrated matching that greatly reduces the number of external components and layout area in the customer application.

  6. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  7. SMT Packaged, GaAs MMIC, Sub-Harmonically Pumped Chipset 2/16/2007
    Mimix Broadband, Inc. provides surface mount technology (SMT) packaged, gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped receiver and transmitter devices. These chips integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier, and a low-noise amplifier for the receiver, and an output amplifier for the transmitter
  8. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  9. XP1009 17 To 21 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm