semiconductors-ics-products

  1. SMT Packaged GaAs MMIC Receivers 9/6/2006
    Mimix Broadband, Inc. provides a family of Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receivers in RoHS-compliant, surface mount technology (SMT) packages, covering 11 to 45 GHz...
  2. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  3. XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter 6/5/2007
    Mimix Broadband’s 18 to 36 GHz GaAs MMIC transmitter has a +25.0 dBm output third order intercept across the band. This device is a balanced resistive pHEMT mixer followed by a distributed amplifier and includes an integrated LO doubler and LO buffer amplifier
  4. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier 3/8/2006
    The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
  5. XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter 7/23/2007
    Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier
  6. High-Linearity 2.5 GHz Front-End Modules (FEMs) 8/13/2015

    Qorvo presents a new series of high-linearity 2.5 GHz Front-End Modules (FEMs) built for automotive Wi-Fi applications, 802.11b/g/n, and Bluetooth® systems. These devices feature integrated b/g/n power amplifiers, directional power detectors, RX balun, and TX filtering. Each FEM contains an ultra-small form factor and integrated matching that greatly reduces the number of external components and layout area in the customer application.

  7. Custom Thin Film Metalized Substrates 12/4/2001
    Johanson Technology offers a wide range of dielectrics for use in application specific environments. These materials are available in both lapped and "as fired" condition as well as metalized and non-metalized substrates...
  8. XP1011 36 To 40 GHz GaAs MMIC Power Amplifier 5/7/2005
    roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm
  9. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively