semiconductors-ics-products

  1. 433-MHz To 470-MHz Transmit/Receive Front End Module: RF6504
    2/2/2012
    The RF6504 Transmit/Receive Front End Module features 1 dB interface Rx insertion loss, a separate 50? Tx/Rx Transceiver, and 30 dBm Tx output power. Two separate ports can be found on the device (Rx and Tx) The Rx port is a pass through port, and the Tx section provides a PA with nominal output power of 30dBm and 15dB gain. Both combine to one antenna port with a SP2T switch.
  2. MMIC Wideband Amplifier (BGM1014 T/R)
    1/21/2009
    Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
  3. GPS Filter-LNA Front-End Module: ALM-1912
    12/2/2009
    The Avago ALM-1912 is a GPS front-end module that combines a GPS FBAR filter with High-gain Low-noise amplifier (LNA). The LNA uses Avago's proprietary GaAs enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity.
  4. GaAs MMIC I/Q Mixers
    4/6/2013

    These GaAs MMIC I/Q Mixers are ideal for applications involving point-to-point radio, point-to-multi-point radio, sensors, military radar, satellite communications, EW, and ELINT. Two different models are available in this series with frequency range coverage of 24-28 GHz, and 8-12 GHz.

  5. RF Diodes For Broadband Applications
    7/2/2015

    Skyworks Solutions offers a select group of their most popular PIN, limiter, Schottky, and tuning varactor diodes that are designed to meet demanding applications, and are available to ship from stock for prototype or high-volume production.

  6. XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
    6/7/2005
    Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  7. Thick Film Jumpers, Mounting Pads, And Kits
    12/19/2006
    These glass insulated, "0-Ohm", gold jumpers are ideally suited for providing interconnections and wiring crossovers in the fabrication of "chip and wire" type microelectronic modules. These jumpers allow for prototype and small quantity circuitry layouts without the need for special conductor patterns
  8. AMI/AMR Smart Energy Tx/Rx Front End Modules: RF65x9 Series
    8/1/2012

    RFMD’s AMI/AMR Smart Energy Tx/Rx Front End Modules consists of three separate models ideal for wireless automatic metering, single chip RF front end module, portable battery powered equipment, and 868MHz/900MHz ISM band applications.

  9. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
    5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  10. MMIC (75 ohm)
    12/29/2008
    RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.