semiconductors-ics-products

  1. XP1009 17 To 21 GHz GaAs MMIC Power Amplifier 6/7/2005
    Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm
  2. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  3. 14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD 7/18/2008
    Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
  4. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  5. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier 6/7/2007
    Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
  6. SMT Packaged GaAs MMIC Receivers 9/6/2006
    Mimix Broadband, Inc. provides a family of Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receivers in RoHS-compliant, surface mount technology (SMT) packages, covering 11 to 45 GHz...
  7. XP1011 36 To 40 GHz GaAs MMIC Power Amplifier 5/7/2005
    roadband’s three stage 36.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm
  8. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  9. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier 11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity