semiconductors-ics-products

  1. Thin-Film Directional Couplers (CP0402A2140ELTR) 1/21/2009
    The ITF High Directivity LGA Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency performance and rugged construction for reliable automatic assembly.
  2. XU1001 36.0-40.0 GHz GaAs MMIC Up-Converter 3/26/2003
    Mimix Broadband's 36.0-40.0 GHz GaAs MMIC up-converter has a typical small signal conversion gain of 4.0 dB with a 35 dB typical LO/RF isolation...
  3. Thin-Film Directional Couplers (CP0402A3200ALTR) 1/21/2009
    The ITF High Directivity LGA Coupler is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency performance and rugged construction for reliable automatic assembly.
  4. 6-11 GHz Low Noise Amplifier: CMD186P3 5/28/2013

    The CMD186P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD186P3 is ideally suited for EW and communications systems where small size and low power consumption are needed.

  5. MMIC (75 ohm) 12/29/2008
    RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
  6. Front End Module (FEM) for WiFi 802.11a/n/ac Systems: RFFM4501E 1/30/2013

    This front end module (FEM) covers the 4.9 GHz to 5.85 GHz frequency range and features an integrated 4.9GHz to 5.85GHz amplifier, SPDT Tx/Rx Switch, LNA with bypass, and power detector coupler. It’s ideal for ISM band and WiFi applications, and for use with portable battery powered equipment, and WiFi access points, gateways, and set top boxes.

  7. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  8. WiFi Front End Module: RFFM4203 10/18/2012

    This 3.0V to 5.0V Front End Module (FEM) operates in the 2.4 GHz to 2.5 GHz (ISM band) frequency range and is ideal for IEEE802.11b/g/n WiFi applications, portable battery-powered equipment, WiFi access points, gateways, and set top boxes.

  9. ALM-1712 - GPS RF Front End Module With FBAR Filters 12/2/2008
    Avago Technologies’ ALM-1712 is a GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity.
  10. E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi 10/12/2010
    Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.