semiconductors-ics-products

  1. XM1003-BD: 32 To 42 GHz GaAs MMIC Image Reject Mixer 2/27/2008
    Mimix Broadband’s 32 to 42 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an up or down-converter. The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band
  2. Custom Thin Film Metalized Substrates 12/4/2001
    Johanson Technology offers a wide range of dielectrics for use in application specific environments. These materials are available in both lapped and "as fired" condition as well as metalized and non-metalized substrates...
  3. XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter 7/23/2007
    Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier
  4. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  5. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier 4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  6. 40REC0382 35.0-45.0 GHz GaAs MMIC Receiver 5/10/2004
    Mimix Broadband's 35.0-45.0 GHz GaAs MMIC receiver has a noise figure of 4.0 dB and 18.0 dB image rejection across the band...
  7. SMT Packaged GaAs MMIC Receivers 9/6/2006
    Mimix Broadband, Inc. provides a family of Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receivers in RoHS-compliant, surface mount technology (SMT) packages, covering 11 to 45 GHz...
  8. High-Linearity 2.5 GHz Front-End Modules (FEMs) 8/13/2015

    Qorvo presents a new series of high-linearity 2.5 GHz Front-End Modules (FEMs) built for automotive Wi-Fi applications, 802.11b/g/n, and Bluetooth® systems. These devices feature integrated b/g/n power amplifiers, directional power detectors, RX balun, and TX filtering. Each FEM contains an ultra-small form factor and integrated matching that greatly reduces the number of external components and layout area in the customer application.

  9. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively