semiconductors-ics-products

  1. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier 3/8/2006
    The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
  2. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier 11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  3. Custom Thin Film Metalized Substrates 12/4/2001
    Johanson Technology offers a wide range of dielectrics for use in application specific environments. These materials are available in both lapped and "as fired" condition as well as metalized and non-metalized substrates...
  4. XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter 6/5/2007
    Mimix Broadband’s 18 to 36 GHz GaAs MMIC transmitter has a +25.0 dBm output third order intercept across the band. This device is a balanced resistive pHEMT mixer followed by a distributed amplifier and includes an integrated LO doubler and LO buffer amplifier
  5. CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier 6/7/2007
    Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
  6. SMT Packaged, GaAs MMIC, Sub-Harmonically Pumped Chipset 2/16/2007
    Mimix Broadband, Inc. provides surface mount technology (SMT) packaged, gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped receiver and transmitter devices. These chips integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier, and a low-noise amplifier for the receiver, and an output amplifier for the transmitter
  7. XP1010 21 To 24 GHz GaAs MMIC Power Amplifier 5/7/2005
    Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  8. High Gain GaAs MMIC Buffer Amplifiers 3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
  9. XM1003-BD: 32 To 42 GHz GaAs MMIC Image Reject Mixer 2/27/2008
    Mimix Broadband’s 32 to 42 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an up or down-converter. The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band