PIN diodes are essential tools in the designer’s handbook. There are many resources that provide information about PIN diode characteristics and integration
TowerJazz and Cavendish Kinetics, recently announced their collaboration to bring MEMS tunable RF solutions to the consumer mobile wireless market. The process technology combines the Cavendish NanoMech MEMS technology with the TowerJazz power CMOS process and custom RF interconnect in a single chip solution.
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has released a new Broadband High IP3 Downconverter RFIC which operates from 700 to 3500 MHz.
The "2018 IoT and Embedded AI Chip Platform and Eco Strategy Conference" will be held on December 8, 2017 at Intercontinental Hotel Beijing Beichen as one of the sub-forums at the "2017 IoT Developers Conference".
RFMW, Ltd. announces design and sales support for a high-speed FET driver from Peregrine Semiconductor. The PE29102 is designed to control the gates of external power devices such as GaN FETs providing switching transition speeds in the sub-nanosecond range for switching power supply applications up to 40MHz.
Redondo Beach, CA — Northrop Grumman Corporation (NYSE: NOC) announced on Monday the highest power Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier ever produced at Ka-band. The company's Salah Din presented its paper on this achievement, entitled “High Power and High Efficiency Ka-band Power Amplifier,” at IMS on Wednesday, May 20.
SiTime Corporation, a leading provider of MEMS timing, and Intel today announced a collaboration to work together on integrating timing solutions for Intel's 5G multi-mode radio modems, with additional applicability to Intel LTE, millimeter-wave wireless, Wi-Fi, Bluetooth, and GNSS solutions.
Mobile World Congress– Ethertronics, the leader in high performance antenna system solutions, recently announced the EC714 Wi-Fi Active Steering Front End Module (FEM), which provides a breakthrough 5 GHz Wi-Fi Front End Module solution for 802.11 ax/ac devices.
IBM, its Research Alliance partners GLOBALFOUNDRIES and Samsung, and equipment suppliers have developed an industry-first process to build silicon nanosheet transistors that will enable 5 nanometer (nm) chips.
High Throughput Satellites (HTS) are capable of transmitting data over a hundred times faster than conventional Fixed Satellite Service (FSS) satellites and this higher throughput needs more dynamic range within the ground segment. Addressing this need, ViaLite has launched the new L-Band HTS – HWDR RF over fiber link.
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