News
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M/A-COM Technology Solutions Announces New PIN Limiter Diode For S-Band And L-Band Applications
3/14/2013
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced recently a new Limiter Diode designed for passive limiter control circuits in L- and S- Band applications.
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Northrop Grumman Creates Highest Power Single Chip Ka-Band Amplifier
5/18/2015
Redondo Beach, CA — Northrop Grumman Corporation (NYSE: NOC) announced on Monday the highest power Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier ever produced at Ka-band. The company's Salah Din presented its paper on this achievement, entitled “High Power and High Efficiency Ka-band Power Amplifier,” at IMS on Wednesday, May 20.
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Northrop Grumman Begins Sampling New Gallium Nitride MMIC Product Line For Military, Challenging Commercial High-Power Amplifier Needs
10/30/2012
Northrop Grumman Corporation has developed a line of gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) for military and commercial uses.
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Rakon Introduces MEMS Technology To Frequency Control Products Portfolio
10/16/2012
Rakon’s Managing Director, Brent Robinson says the company has looked into the technology for many years and the timing is now right to further diversify its offering to include MEMS oscillators.
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EU, S. Korea Regulators OK Qualcomm Acquisition Of NXP; Deal Awaiting Chinese Approval
1/18/2018
Qualcomm Incorporated recently announced that the European Commission and the Korea Fair Trade Commission (KFTC) authorized the acquisition by Qualcomm River Holdings B.V., an indirect wholly owned subsidiary of Qualcomm, of NXP Semiconductors N.V. The acquisition has now received 8 of the 9 approvals around the world, with China remaining.
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“Atomristors” Hold Promise For Memory Storage, RF Switching
1/17/2018
Engineers worldwide have been developing alternative ways to provide greater memory storage capacity on even smaller computer chips. Previous research into two-dimensional atomic sheets for memory storage has failed to uncover their potential — until now.
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Custom MMIC Unveils Three New LNA MMICs At IMS 2012
6/20/2012
In IMS booth #3210, Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is introducing three new devices from its growing MMIC IP/design library. CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB. This amplifier delivers high performance with high efficiency, reducing typical industry DC power dissipation for a device in this frequency band from approximately 340 mW down to 50 mW.
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MMIC Amplifiers Offer High Output Power And Positive Bias
12/19/2012
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added three new GaAs MMIC power amplifiers covering 5 to 11 GHz to their growing standard product library.
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Altum RF To Showcase Products And Expertise At EuMW 2022
9/14/2022
Join Altum RF, a supplier of high-performance RF to millimeter-wave semiconductor solutions for next generation markets and applications, at the European Microwave Week (EuMW) 2022 event to be held in Milan.
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RFMW Offers High Speed Driver For Switching Applications
12/19/2017
RFMW, Ltd. announces design and sales support for a high-speed FET driver from Peregrine Semiconductor. The PE29102 is designed to control the gates of external power devices such as GaN FETs providing switching transition speeds in the sub-nanosecond range for switching power supply applications up to 40MHz.