News

  1. SiTime And Intel Announce Collaboration On MEMS Timing For 5G
    7/24/2018

    SiTime Corporation, a leading provider of MEMS timing, and Intel today announced a collaboration to work together on integrating timing solutions for Intel's 5G multi-mode radio modems, with additional applicability to Intel LTE, millimeter-wave wireless, Wi-Fi, Bluetooth, and GNSS solutions.

  2. ViaLite Launches Hyper-Wide Dynamic Range RF Over Fiber Link
    3/1/2018

    High Throughput Satellites (HTS) are capable of transmitting data over a hundred times faster than conventional Fixed Satellite Service (FSS) satellites and this higher throughput needs more dynamic range within the ground segment. Addressing this need, ViaLite has launched the new L-Band HTS – HWDR RF over fiber link.

  3. M/A-COM Technology Solutions Announces New PIN Limiter Diode For S-Band And L-Band Applications
    3/14/2013

    M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced recently a new Limiter Diode designed for passive limiter control circuits in L- and S- Band applications.

  4. 2017 IEEE Wireless and Microwave Technology Conference (WAMICON) Scheduled
    10/12/2016

    The Institute of Electrical and Electronics Engineers (IEEE) Wireless and Microwave Technology Conference (WAMICON), recently announced the 18th annual event which will take place in Cocoa Beach Florida.

  5. Custom MMIC Announces New Fundamental Mixer, Offers Low Conversion Loss
    4/11/2013

    Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits, has announced a new general purpose, double balanced fundamental mixer—the CMD178C3.

  6. Custom MMIC Adds Four New Products To Its Growing Line Of Amplifiers
    4/25/2013

    Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.

  7. Northrop Grumman Creates Highest Power Single Chip Ka-Band Amplifier
    5/18/2015

    Redondo Beach, CA — Northrop Grumman Corporation (NYSE: NOC) announced on Monday the highest power Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier ever produced at Ka-band. The company's Salah Din presented its paper on this achievement, entitled “High Power and High Efficiency Ka-band Power Amplifier,” at IMS on Wednesday, May 20. 

  8. “Atomristors” Hold Promise For Memory Storage, RF Switching
    1/17/2018

    Engineers worldwide have been developing alternative ways to provide greater memory storage capacity on even smaller computer chips. Previous research into two-dimensional atomic sheets for memory storage has failed to uncover their potential — until now.

  9. RFMW Offers High Speed Driver For Switching Applications
    12/19/2017

    RFMW, Ltd. announces design and sales support for a high-speed FET driver from Peregrine Semiconductor. The PE29102 is designed to control the gates of external power devices such as GaN FETs providing switching transition speeds in the sub-nanosecond range for switching power supply applications up to 40MHz.

  10. Custom MMIC Unveils Three New LNA MMICs At IMS 2012
    6/20/2012

    In IMS booth #3210, Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is introducing three new devices from its growing MMIC IP/design library. CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB. This amplifier delivers high performance with high efficiency, reducing typical industry DC power dissipation for a device in this frequency band from approximately 340 mW down to 50 mW.