SiTime Corporation, a leading provider of MEMS timing, and Intel today announced a collaboration to work together on integrating timing solutions for Intel's 5G multi-mode radio modems, with additional applicability to Intel LTE, millimeter-wave wireless, Wi-Fi, Bluetooth, and GNSS solutions.
High Throughput Satellites (HTS) are capable of transmitting data over a hundred times faster than conventional Fixed Satellite Service (FSS) satellites and this higher throughput needs more dynamic range within the ground segment. Addressing this need, ViaLite has launched the new L-Band HTS – HWDR RF over fiber link.
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced recently a new Limiter Diode designed for passive limiter control circuits in L- and S- Band applications.
The Institute of Electrical and Electronics Engineers (IEEE) Wireless and Microwave Technology Conference (WAMICON), recently announced the 18th annual event which will take place in Cocoa Beach Florida.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits, has announced a new general purpose, double balanced fundamental mixer—the CMD178C3.
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), has added four new amplifiers in die form to its product family: the CMD164, 165, and 173 distributed amplifiers, and the CMD166 driver amplifier.
Redondo Beach, CA — Northrop Grumman Corporation (NYSE: NOC) announced on Monday the highest power Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier ever produced at Ka-band. The company's Salah Din presented its paper on this achievement, entitled “High Power and High Efficiency Ka-band Power Amplifier,” at IMS on Wednesday, May 20.
Engineers worldwide have been developing alternative ways to provide greater memory storage capacity on even smaller computer chips. Previous research into two-dimensional atomic sheets for memory storage has failed to uncover their potential — until now.
RFMW, Ltd. announces design and sales support for a high-speed FET driver from Peregrine Semiconductor. The PE29102 is designed to control the gates of external power devices such as GaN FETs providing switching transition speeds in the sub-nanosecond range for switching power supply applications up to 40MHz.
In IMS booth #3210, Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is introducing three new devices from its growing MMIC IP/design library. CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB. This amplifier delivers high performance with high efficiency, reducing typical industry DC power dissipation for a device in this frequency band from approximately 340 mW down to 50 mW.
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