Products and Services

  1. 81-86 GHz GaAs HEMT High Power Amplifier: APH667
    10/29/2012

    This high power amplifier operates in the 81 to 86 GHz frequency range, and is ideal for wireless fiber replacement, short haul/high capacity links, and enterprise wireless LAN applications. It features a 2 mil substrate, a 25.5 dBm (typ) power saturation, 17dB (typ) linear gain, 4 VDC @ 630 mA DC power, and an 11.07 sq. mm die size.

  2. RF Amplifier System Tested To Mil STD 810: SKU 2126
    10/12/2017

    The new Model SKU 2126 from Empower RF is a rugged amplifier system that has undergone 40g shock testing while operating uninterrupted at full rated output power, and is suitable for octave bandwidth high power CW, modulated, and pulse applications. The system passed testing for MIL-STD-810E Method 514.4 vibration 40g Peak while operational for 270 minutes in each axis.

  3. 5.0 - 6.0 GHz GaN Power Amplifier: TGA2307-SM
    12/4/2015

    Qorvo’s new TGA2307-SM is a GaN Power Amplifier able to operate over the 5.0 - 6.0 GHz frequency range. Fabricated on Qorvo's production 0.25um GaN on SiC process, this amplifier produces greater than 47 dBm of saturated output power with a power-added efficiency greater than 44%, and a large signal gain greater than 20 dB.

  4. Ducommun GaAs MMIC Power Amplifiers
    6/22/2017

    Ducommun offers a range of GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifiers (PAs) for a variety of applications including satellite communications, point-to-point radios, and radar front applications in military and space markets.

  5. Cellular Band High Power Amplifiers
    5/14/2018

    Corry Micronics, Inc. (CMI) offers a wide range of cellular band high-power amplifiers operating over the 900 MHz to 2,700 MHz frequency range for use in a variety of cellular applications. This family of amplifiers features high linearity, base station quality, low noise figure, and frequency modulation in GSM, LTE, and UMTS.

  6. 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures
    5/16/2016

    Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

  7. GaN MMIC Power Amplifiers
    7/17/2013

    These GaN MMIC power amplifiers are ideal for applications involving test instrumentation, general communications, and general radar. Two models are featured below, a 25 Watt PA covering the 2-6 GHz frequency range, and an 8 Watt PA covering the 2-20 GHz frequency range.

  8. Airborne Telemetry Power Amplifier: NuPower™ L60T01
    9/19/2018

    The NuPower™ L60T01 is a L- and S-band solid-state power amplifier designed to deliver over 60 Watts of RF power in the 960 to 1390 MHz frequency range to extend the operational range of airborne telemetry links and transmitters. Based on the latest GaN technology, the amplifier’s 25% power efficiency at rated power and <10 in3 form factor make it ideal for size, weight, and power-constrained airborne RF telemetry, tactical communication systems, and electronic warfare systems.

  9. High Transmit Power GaN Power Amplifier: TA1003
    9/26/2013

    This is a class AB, GaN amplifier module with high linear transmit power with superior EVM performance and greater than 40% efficiency. Its 30 MHz to 3000 MHz frequency range makes it ideal for a wide variety of applications.

  10. 851 – 894 MHz Linear Power Amplifier: SKY66185-11
    5/18/2016

    The SKY66185-11 is an 851 – 894 MHz high-linearity lower amplifier designed for FDD 3G/4G LTE small cell base stations that operate within the 851 – 984 MHz frequency range. It is also useful for active distributed antenna systems, cellular repeaters, and driver amplifiers. The amplifier features fully matched input/output, high gain, and an active biasing circuitry that is integrated to compensate its performance over temperature, voltage, and process variation.