Products and Services
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Very Low Distortion Attenuator Plastic Packaged PIN Diodes: SMP1307 Series
1/25/2021
Skyworks offers the SMP1307 Series of plastic packaged, surface mountable, low capacitance silicon PIN diodes designed for attenuator applications operating from 5 MHz to beyond 2 GHz. With a thick 175 μm I region width, these PIN diodes are ideal for use in very low distortion Pi and TEE attenuators commonly found in TV distribution applications.
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SP6T RF Switch: H60 Series
3/21/2023
The SP6T RF Switch H60 series with 2.92 mm female connectors features DC – 40 GHz frequency for 5G and high-frequency applications and offers low insertion loss and return loss, high isolation, and excellent repeatability.
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50 Ohm SMA Male Termination: 50T-455 SMA
11/11/2022
Model 50T-455 SMA M is a 50 Ohm termination (aka dummy load) that operates DC-18 GHz. It has an SMA male RF connector and is rated for 1 Watt RF input power.
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4.0 - 8.0 GHz, 10 KW Solid State High Power Pulse Amplifier: AMP2083P-LC-10KW
1/13/2025
The AMP2083P-LC-10KW is specifically designed for EMI/RFI testing, laboratory use, and HIRF (High-Intensity Radiated Fields) or pulse applications.
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Class A Broadband Amplifier: CBA 100M-400
7/18/2012
This Class A design of this broadband amplifier results in a system with high reliability and low distortion linear performance across the frequency range. It also ensures that the CBA-100M-400 Broadband Amplifier will continuously operate at full power, even when presented with an open or short circuit as its output.
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Miniature SMD Crystal
3/17/1999
Model VFC232 is a miniature crystal designed for use in PCMCIA cards, portable electronic devices
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6 – 18 GHz, 200 W TWT Amplifier: dB-4163
11/6/2017
The dB-4163 TWT Amplifier (TWTA) is designed to operate within the 6 – 18 GHz frequency range and provide up to 200 W CW output power for electronic countermeasure (ECM), electronic warfare (EW) simulation, and multi-band communication applications.
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Microwave / mmWave Gap Capacitor: XG Series
6/10/2024
The XG Series low-profile gap capacitor features low insertion loss and ultra high self resonance frequencies for applications including DC blocking, RF Bypass, impedance matching, filtering, tuning and coupling.
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2.7 – 3.5 GHz, 100 Watt GaN Power Amplifier: QPA3069
9/5/2019
The QPA3069 is Qorvo’s GaN power amplifier operating from 2.7 – 3.5 GHz for radar and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 100 W of saturated output power and greater than 25 dB of large-signal gain while achieving greater than 53% power-added efficiency.
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High Gain GaAs MMIC Buffer Amplifiers
3/8/2007
Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively