08.24.23 -- Tech Worker Crisis Looms In Semiconductor Industry

Recent testing confirms that GaAs MMIC filters excel in performance, cost-effectiveness, consistency, and resilience across temperature and power variations.

Massive MIMO employs numerous antennas on a single array, benefiting from GaN on high-thermal conductivity SiC for 5G implementation.

This article introduces IPD technology, showcases performance using Mini-Circuits' components, and outlines their reliability testing processes for IPD products.

The shift to Industry 4.0 involves global digitization and networking of industrial processes, posing challenges and opportunities for semiconductor manufacturers.

Qorvo (UnitedSiC) has expanded its breakthrough Gen 4 SiC FET portfolio, extending performance leadership with a 750V/5.4 mOhm SiC FET offered in a new surface-mount TO-leadless (TOLL) package.

High-power PIN diodes in MMICs are gaining prominence for defense and telecom systems, with AlGaAs/GaAs heterojunction improving performance while preserving operating traits.

This application note offers guidance on component selection for the operation of the integrated digital isolator channels and isolated DC-DC controller in Si882xx/Si883xx products.

Engineers can use a noise model like an additive white Gaussian noise (AWGN) channel to emulate nature’s random processes and reproduce its effects on a system.