Application Note

750V Gen 4 SiC FETs Extend Performance Leadership In Lowest On-Resistance Surface-Mount, TOLL Package

Source: Qorvo
Gen 4 SiC FETs Extend Performance Leadership While Enabling New Levels Of Design Flexibility

Qorvo (UnitedSiC) has expanded its breakthrough Gen 4 SiC FET portfolio, extending performance leadership with a 750V/5.4 mOhm SiC FET offered in a new surface-mount TO-leadless (TOLL) package. This first product is first in a family of 750V SiC FETs that will be released in the TOLL package with onresistance ranging from 5.4 mohm to 60 mohm. These devices are ideal for use in space-constrained applications such as AC/DC power supplies ranging from several 100s of Watts to multiple kiloWatts, as well as solid-state relays and circuit breakers up to 100A level.

In the 600/750V class of power FETs, Gen 4 SiC FETs offer unmatched performance across the main figures of merit (FOM) for on-resistance and output capacitance. Additionally, in the TOLL package, at 5.4 mohm, the devices have 4-10x lower on-resistance than competing best-in-class Si MOSFETs, SiC MOSFETs and GaN transistors.

The 750V rating of the SiC FETs is also 100-150V higher than the alternative technologies, providing a significantly enhanced design margin for managing voltage transients.

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