03.14.23 -- How GaN Is Transforming 5G

There are inherent advantages of silicon technology are benefits of Analog Devices’ new RF and microwave (MW) switch and attenuator products implemented in advanced silicon process, when compared to legacy counterparts using gallium-arsenide (GaAs). This paper provides highlights on features and key performance parameters of the new switch and attenuator products. 

Gallium nitride (GaN) is widely viewed as a transformative technology that has enabled smaller, lighter, and more reliable RF/microwave devices than its predecessors. However, there are trade-offs to consider when selecting which technology to use for a particular application. 

With GaN amplifiers for space, radiation-tolerant data recorders and other technologies, the new space economy is well-positioned to decrease costs, opening the doors to a host of new applications.

Since creating the industry’s first GaN on SiC HEMT over two decades ago, Wolfspeed has enabled and driven the market by offering GaN on SiC products that effectively replace LDMOS parts in applications.

KRYTAR, Inc. announces eight new two-way power dividers offering high performance over the broadband frequency range of 6.0 to 40.0 GHz in single compact packages.

Load pull is a powerful method for characterizing RF power amplifiers through impedance variation. Load pull enables model extraction and validation as well as performance, ruggedness, and efficiency testing.

Current probes generate and measure RF currents, combining great diagnostic utility with ease of use. However, a basic knowledge of these devices is necessary to maximize their effectiveness.  

This application note introduces IQ, single sideband (SSB), and image reject (IR) mixers in both theory and practice. We will discuss basic applications, their concepts, and practical considerations in their selection and use.