Newsletter | March 14, 2023

03.14.23 -- How GaN Is Transforming 5G

From The Editor
Featured Article
Spotlight On GaN/GaAs/SiGe Solutions
RF And MW Control Products In Silicon

There are inherent advantages of silicon technology are benefits of Analog Devices’ new RF and microwave (MW) switch and attenuator products implemented in advanced silicon process, when compared to legacy counterparts using gallium-arsenide (GaAs). This paper provides highlights on features and key performance parameters of the new switch and attenuator products. 

A Comparative Review Of GaN, LDMOS, And GaAs For RF And Microwave

Gallium nitride (GaN) is widely viewed as a transformative technology that has enabled smaller, lighter, and more reliable RF/microwave devices than its predecessors. However, there are trade-offs to consider when selecting which technology to use for a particular application. 

Microelectronics Powering The New Space Economy

With GaN amplifiers for space, radiation-tolerant data recorders and other technologies, the new space economy is well-positioned to decrease costs, opening the doors to a host of new applications.

Wolfspeed RF GaN Meets 5G Demands On PA Design

Since creating the industry’s first GaN on SiC HEMT over two decades ago, Wolfspeed has enabled and driven the market by offering GaN on SiC products that effectively replace LDMOS parts in applications.

Industry Insights
2-Way Power Dividers With High-Performance Over The 6.0 To 40.0 GHz Frequency Range

KRYTAR, Inc. announces eight new two-way power dividers offering high performance over the broadband frequency range of 6.0 to 40.0 GHz in single compact packages.

Amplifier Characterization Using Load Pull

Load pull is a powerful method for characterizing RF power amplifiers through impedance variation. Load pull enables model extraction and validation as well as performance, ruggedness, and efficiency testing.

Understanding And Implementing RF Current Probes

Current probes generate and measure RF currents, combining great diagnostic utility with ease of use. However, a basic knowledge of these devices is necessary to maximize their effectiveness.  

IQ, IR, And Single Sideband Mixer Primer

This application note introduces IQ, single sideband (SSB), and image reject (IR) mixers in both theory and practice. We will discuss basic applications, their concepts, and practical considerations in their selection and use.

Most Popular News
Featured Multimedia
Diplex Matched Antenna Tutorial Using XFdtd’s Schematic Editor

This tutorial demonstrates XFdtd's workflow for evaluating a diplex matched antenna and analyzing two different matching network states simultaneously.

Bulletin Board
dBm To Watts Power Conversion Table

The Exodus Available Power Conversion Chart is an excellent aid for quickly converting dBm to watts when testing low, medium, or high power amplifiers. The Exodus Chart lends customers quick conversion when necessary.

Featured Products And Resources
Si894x Isolated Delta-Sigma Modulator For Current Measurement

The Si894x is a galvanically isolated delta-sigma modulator that outputs a digital signal proportional to the voltage level at the input. 

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Skyworks Solutions, Inc.
100-MHz 10x Frequency Divider: HX4210

The Holzworth HX4210 100 MHz 10x frequency divider is a high-grade laboratory accessory. An emphasis was placed on maintaining the low jitter and phase noise of an external reference or frequency source to maintain the integrity of system timing and noise.

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Wireless Telecom Group
Solid State Broadband High-Power Amplifier: 2244

Empower RF's 2244 amplifier comprises multi-drawer integrated liquid-cooled subsystems to produce a minimum of 8kW peak pulsed output power in the L-band frequency. Each of the amplifier subsystem drawers features multiple high-power GaN on SiC devices that provide wide frequency response, high gain, high peak power capability, and low distortions.

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Empower RF Systems, Inc.
X-Band RF Transmitter: VSX3717

CPI’s VSX3717 is an air- or liquid-cooled 4.0 kW X-band solid state power amplifier optimized for pulse radars. This amplifier utilizes GaN transistors to provide high gain, high efficiency, and excellent pulse fidelity. The result is excellent AM/PM, phase-noise, and spectral regrowth performance.

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Communications & Power Industries