A Comparative Review Of GaN, LDMOS, And GaAs For RF And Microwave Applications
Source: NuWaves Engineering
By Anthony Combs, NuWaves Engineering
Gallium nitride (GaN) is widely viewed as a transformative technology which has enabled smaller, lighter, and more reliable RF/microwave devices than its predecessors. However, there are trade-offs to consider when selecting which technology to use for a particular application. This application note describes these differences in a comparative review.
VIEW THE APPLICATION NOTE!
Log In
Signing up provides unlimited access to:
Free Sign Up
Signing up provides unlimited access to:
- Trend and Leadership Articles
- Case Studies
- Extensive Product Database
- Premium Content
HELLO. PLEASE LOG IN.
X
Not yet a member of RF Globalnet? Register today.
ACCOUNT SIGN UP
X
Please fill in your account details
ACCOUNT SIGN UP
NuWaves Engineering
This website uses cookies to ensure you get the best experience on our website. Learn more