Wolfspeed RF GaN Meets 5G Demands On PA Design

Since creating the industry’s first GaN on SiC HEMT over two decades ago, Wolfspeed has enabled and driven the market by offering GaN on SiC products that effectively replace LDMOS parts in applications. As the only vertically integrated GaN and Silicon Carbide manufacturer, the company leads competition by continually investing in the development of products and processes that meet market needs with a wide variety of frequency bands in the DC – 40 GHz range and with 28 V, 40 V, and 50 V bias voltages.

5G gains are best realized with Wolfspeed’s GaN on SiC components that allow RF designers to achieve application requirements of higher linearization, greater power density and improved thermal conductivity.