MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
Low Noise Figure X-Band AESA Core IC Solutions
Anokiwave offers 4 ICs in the family of X-band silicon radar quad core IC solutions designed for use in commercial radar and 5G communications markets. Acting as a 4 channel beamformer, LNA, and PA, each IC supports 4 radiating elements with dual beam Rx, single beam Tx, and provides a low noise figure in Rx mode to allow for a complete silicon RF solution in commercial AESA systems.
XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter
Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier
Thin-Film Directional Couplers (CP0402A2140ELTR)
The ITF High Directivity LGA Coupler is based on thin-film multilayer
technology. The technology provides a miniature part with excellent high
frequency performance and rugged construction for reliable automatic
Front End Module (FEM) for WiFi 802.11a/n/ac Systems: RFFM4501
This front end module (FEM) features an ultra-small form factor and is ideal for IEEE802.11a/n/ac WiFi applications, 4.9GHz to 5.85GHz ISM Band applications, applications involving portable battery powered equipment, and applications involving WiFi access points, gateways, and set top boxes.
25 To 33 GHz 0.7W Power Amplifier MMIC: AMMC-6431
The 25-33 GHz 0.7W Power Amplifier MMIC: AMMC-6431 from Avago Technologies is a MMIC power amplifier designed for use in wireless transmitters that operate within a 25 GHz and 33 GHz range. At 32 GHz, it provides 28.5 dBm of output power (1) and 19.5 dB of small-signal gain from a small easy to-use device.
SMT Packaged, GaAs MMIC, Sub-Harmonically Pumped Chipset
Mimix Broadband, Inc. provides surface mount technology (SMT) packaged, gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), sub-harmonically pumped receiver and transmitter devices. These chips integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier, and a low-noise amplifier for the receiver, and an output amplifier for the transmitter
GaAs MMIC Doubler: XX1010-QT
This GaAs MMIC Doubler operates in the 15.625-15.0 and 29.25-30.0 GHz frequency range. This single device integrates a gain stage, a passive doubler, and a driver amplifier, and makes for an ideal driver stage to the final output power amplifier in Ka band VSAT terminals.
RF5725 - 3.3 V, Single-Band Front-End Module
The RF5725 is a single-chip integrated front-end module (FEM) for high performance WLAN applications in the 2.4GHz to 2.5GHz ISM band. This FEM greatly reduces the number of external components, minimizing footprint and assembly cost of the overall 802.11b/g solution. The RF5725 has an integrated b/g power amplifier, LNA, a Coupler Power detector, and TX filtering. It also is capable of switching between WLAN RX, WLAN TX, and BTH RX/TX operations. This device is manufactured using GaAs HBT and pHEMT processes on a 3mmx3mmx0.5mm 16-pin QFN package. This module meets or exceeds the RF front-end needs of 802.11b/g WLAN RF systems.
2.4 GHz Front End Module for Mobile Devices, Game Consoles, and Tablets
The SKY85203-11 is a front-end module designed for 802.11b/g/n set-top boxes, mobile devices, gaming consoles, and tablets. It integrates an SP3T switch and an LNA with a bypass mode. The module comes in a QFN, 12-pin 2 x 2 x 0.45mm package and has a 14dB receive gain, a noise figure of 2.1dB, and a Transmit/Bluetooth® path loss of 0.7dB.