25 To 33 GHz 0.7W Power Amplifier MMIC: AMMC-6431
The 25-33 GHz 0.7W Power Amplifier MMIC: AMMC-6431 from Avago Technologies is a MMIC power amplifier designed for use in wireless transmitters that operate within a 25 GHz and 33 GHz range. At 32 GHz, it provides 28.5 dBm of output power (1) and 19.5 dB of small-signal gain from a small easy to-use device.
Broadband Fully Integrated Matched Low-Noise Amplifier MMIC: MGA-21108
The Avago MGA-21108 is a fully integrated GaAs Low Noise Amplifier, LNA, MMIC for use in the 1.5GHz to 8GHz band.
MMA-022030B Broadband MMIC Power Amplifier
The MMA-022030B is a 2 - 20GHz broadband MMIC power amplifier with nearly 1W output power (P-2dB). It is realized in
advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications
3.3V 5GHz 802.11a/n Front-End Module: RF5516
RFMD’s RF5516 3.3V 5GHz 802.11a/n Front-End Module features a single supply voltage of 3.0V to 4.8V, an integrated 5Ghz Amplifier, an LNSA, and a SPT2T TX/RX Switch. It’s ideal for IEEE802.11a WiFi, and 5GHz ISM Band applications, and with portable battery powered equipment.
XP1011 36 To 40 GHz GaAs MMIC Power Amplifier
roadband’s three stage 36.0-40.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +36.0 dBm
PIN Diode for Transmit/Receive Switching Applications: SMP1304-085LF
This high power shunt PIN diode is ideal for high volume switch and attenuator applications in the 10 MHz to 6 GHz frequency range. It features 40 °C/W thermal resistance, 0.3 pF capacitance, low distortion performance, and more. This PIN diode is suitable for 100 W continuous wave T/R switches because of its 3 W dissipation power rating. It’s ideal for the infrastructure and land mobile radio markets.
90W GaN Power Module
M/A COM’s MAMG-001214-090PSM is an L-band 90 W surface mount GaN power module ideal for pulsed radar applications. It features a very compact size (14 x 24 mm2), GaN on SiC D-mode transistor technology, up to 3 ms pulse width and 10% duty cycle, and more.
XU1009-BD - 18 To 36 GHz GaAs MMIC Transmitter
Mimix Broadband’s 18 to 36 GHz GaAs MMIC transmitter has a +25.0
dBm output third order intercept across the band. This device is a
balanced resistive pHEMT mixer followed by a distributed amplifier
and includes an integrated LO doubler and LO buffer amplifier
Low Noise Figure X-Band AESA Core IC Solutions
Anokiwave offers 4 ICs in the family of X-band silicon radar quad core IC solutions designed for use in commercial radar and 5G communications markets. Acting as a 4 channel beamformer, LNA, and PA, each IC supports 4 radiating elements with dual beam Rx, single beam Tx, and provides a low noise figure in Rx mode to allow for a complete silicon RF solution in commercial AESA systems.
Silicon RFIC Wideband Amplifier (UPC2776TB-E3-A)
NEC's UPC2776TB is a Silicon Monolithic integrated circuit
which is manufactured using the NESAT™III process. This
device is suitable for wide band IF blocks due to its high gain
and flat response. The UPC2776TB is pin compatible and
has comparable performance as the larger UPC2776T, so it
is suitable for use as a replacement to help reduce system
size. The IC is housed in a 6 pin super minimold or SOT-363