semiconductors-ics-products

  1. APECS High Precision Thick Film Substrates
    5/31/2011
    APECS means tighter tolerances & lower costs – Using the DuPont Fodel® process as a base technology, Anaren Ceramics’ precision thick film technology (better known as APECS) pushes thick film technology to a best-in-class position from which we can meet or exceed thin film tolerances -- at a far more affordable price point.
  2. PIN Diode for Transmit/Receive Switching Applications: SMP1304-085LF
    5/1/2012

    This high power shunt PIN diode is ideal for high volume switch and attenuator applications in the 10 MHz to 6 GHz frequency range. It features 40 °C/W thermal resistance, 0.3 pF capacitance, low distortion performance, and more. This PIN diode is suitable for 100 W continuous wave T/R switches because of its 3 W dissipation power rating. It’s ideal for the infrastructure and land mobile radio markets.

  3. High Power PIN Diodes: BRO399-11A
    7/28/2011
    Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF and SMP1371-087LF are optimized for use as series diodes. SMP1302-085LF is optimized for use as a shunt diode. Due to their thermally-enhanced package designs, these diodes have very low thermal resistance which enables them to handle very large input power.
  4. MMA-022030B Broadband MMIC Power Amplifier
    4/19/2007
    The MMA-022030B is a 2 - 20GHz broadband MMIC power amplifier with nearly 1W output power (P-2dB). It is realized in advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
  5. WiFi Front End Module: RFFM4203
    10/18/2012

    This 3.0V to 5.0V Front End Module (FEM) operates in the 2.4 GHz to 2.5 GHz (ISM band) frequency range and is ideal for IEEE802.11b/g/n WiFi applications, portable battery-powered equipment, WiFi access points, gateways, and set top boxes.

  6. SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
    7/15/2005
    Sirenza Microdevies' SNA-300 is a GaAs monolithic broadband amplifier in die form. at 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA.
  7. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
    3/8/2006
    The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
  8. E-pHEMT MMIC - AE312
    6/29/2009
    AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
  9. GNSS Filter/LNA Front End Module: ANGP-F001
    9/26/2012

    The ANGP-F001 combines a low-noise amplifier (LNA) with a GNSS FBAR pre-LNA filter. This module features a very low noise figure, a CMOS compatible shutdown pin (SD), advanced GaAs E-pHEMT and FBAR technology, exceptional Cell/DCS/PCS/WLAN-Band rejection, and more.

  10. High Gain GaAs MMIC Buffer Amplifiers
    3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively