semiconductors-ics-products
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CDMA Cellular Band Front-End Module: AFEM-7750
12/3/2009
The AFEM-7750 is a fully matched CDMA Front-End Module featuring the integration of Power Amplifier, Duplexer, Band-pass Filter and coupler.
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MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
7/2/2008
The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and space screening is available.
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XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter
7/23/2007
Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier
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Wideband GaAs MMIC Distributed Amplifier: CMD173
11/15/2012
This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.
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E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
10/12/2010
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.
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Thick Film Process Capabilities
12/19/2006
MSI has beem the leading manufacturer of Precision Hi-Reliability Chip Resistors for more than 30 years. MSI's products are designed for superior solder fillets for optimum performance in the area of stability, solderability, adhesion, power dissipation, and life.
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6-11 GHz Low Noise Amplifier: CMD186P3
5/28/2013
The CMD186P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD186P3 is ideally suited for EW and communications systems where small size and low power consumption are needed.
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Thin Film Dual Resistor Networks - MSDR3 Series
12/19/2006
The MSDR series dual center-tapped chip resistor offers the high stability, low noise, and low T.C.R./T.C. tracking of thin film while providing greater flexibility in hybrid designs
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802.11ac Switch/LNA Front End Module: SKY85608-11
2/24/2015
This front end module (FEM) combines a SP2T switch and an LNA with a bypass mode in an 8-pin, 1.5 x 1.5mm DFN package. It’s ideal for applications involving WiFi-enabled headsets, tablets, and mobile systems, for SiP modules for embedded systems, and in 802.11n/ac smartphones and tablets.
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2000 MTT-S: S-Band GaAs MMIC
6/14/2000
The TMD3438-1 is a S-Band Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) with a frequency range of 3.4 to 3.8 GHz