semiconductors-ics-products

  1. Silicon MMIC Amplifier (BGA2003 T/R)
    1/21/2009
    Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
  2. Front End Module (FEM) for WiFi 802.11a/n/ac Systems: RFFM4501E
    1/30/2013

    This front end module (FEM) covers the 4.9 GHz to 5.85 GHz frequency range and features an integrated 4.9GHz to 5.85GHz amplifier, SPDT Tx/Rx Switch, LNA with bypass, and power detector coupler. It’s ideal for ISM band and WiFi applications, and for use with portable battery powered equipment, and WiFi access points, gateways, and set top boxes.

  3. 5 GHz Front-End-Module: SKY85716-11
    4/6/2015

    This fully matched front-end-module (FEM) comes with an integrated 5 GHz power amplifier with harmonic mode, and a low noise amplifier with bypass mode and an SPDT switch. It’s designed for WiFi-enabled handsets/tablets, system-in-package (SIP) modules for embedded systems, and 802.11n/ac smartphones and tablets.

  4. CDMA Cellular Band Front-End Module: AFEM-7750
    12/3/2009
    The AFEM-7750 is a fully matched CDMA Front-End Module featuring the integration of Power Amplifier, Duplexer, Band-pass Filter and coupler.
  5. PIN Diode for Transmit/Receive Switching Applications: SMP1304-085LF
    5/1/2012

    This high power shunt PIN diode is ideal for high volume switch and attenuator applications in the 10 MHz to 6 GHz frequency range. It features 40 °C/W thermal resistance, 0.3 pF capacitance, low distortion performance, and more. This PIN diode is suitable for 100 W continuous wave T/R switches because of its 3 W dissipation power rating. It’s ideal for the infrastructure and land mobile radio markets.

  6. CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
    3/8/2006
    The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
  7. CMM1100-QF: 2 To 18 GHz GaAs MMIC Low-Noise Amplifier
    11/7/2007
    Mimix Broadband’s two stage 2 to 18 GHz GaAs MMIC low noise amplifier has a small signal gain of 15 dB with a noise figure of 3.8 dB across most of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  8. Thin Film Processing
    3/24/2010
    Cobham MAL Ltd. has retained a thin film processing capability at its Milton Keynes facility for over 25 years. This well developed and regularly used process has been exploited by Cobham in its microwave assemblies and has been qualified into a number of aerospace, defense, communications and space products.
  9. MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip
    7/2/2008
    The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of 30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
  10. APECS High Precision Thick Film Substrates
    5/31/2011
    APECS means tighter tolerances & lower costs – Using the DuPont Fodel® process as a base technology, Anaren Ceramics’ precision thick film technology (better known as APECS) pushes thick film technology to a best-in-class position from which we can meet or exceed thin film tolerances -- at a far more affordable price point.