semiconductors-ics-products

  1. Front End Module (FEM) for WiFi 802.11a/n/ac Systems: RFFM4501E
    1/30/2013

    This front end module (FEM) covers the 4.9 GHz to 5.85 GHz frequency range and features an integrated 4.9GHz to 5.85GHz amplifier, SPDT Tx/Rx Switch, LNA with bypass, and power detector coupler. It’s ideal for ISM band and WiFi applications, and for use with portable battery powered equipment, and WiFi access points, gateways, and set top boxes.

  2. 802.11ac Switch/LNA Front End Module: SKY85608-11
    2/24/2015

    This front end module (FEM) combines a SP2T switch and an LNA with a bypass mode in an 8-pin, 1.5 x 1.5mm DFN package. It’s ideal for applications involving WiFi-enabled headsets, tablets, and mobile systems, for SiP modules for embedded systems, and in 802.11n/ac smartphones and tablets.

  3. Transmit/Receive Front End Modules
    11/16/2012

    These transmit/receive front end modules (FEMs) operate in the 169 to 170 MHz frequency range and are ideal for automated meter reading, advanced metering infrastructure, ISM systems, and other current-sensitive applications. Two different models are available. The SKY65367-11 Front End Module includes a Power Amplifier (PA) capable of more than +29 dBm of transmit output power, and the SKY66100-11 FEM includes a Power Amplifier (PA) capable of more than +24 dBm of transmit output power.

  4. 3.3V 5GHz 802.11a/n Front-End Module: RF5516
    10/3/2011
    RFMD’s RF5516 3.3V 5GHz 802.11a/n Front-End Module features a single supply voltage of 3.0V to 4.8V, an integrated 5Ghz Amplifier, an LNSA, and a SPT2T TX/RX Switch. It’s ideal for IEEE802.11a WiFi, and 5GHz ISM Band applications, and with portable battery powered equipment.
  5. Surface Mount Limiter Diode: CLA4608-085LF
    5/6/2013

    This surface mount limiter diode covers the 10 MHz to 6 GHz frequency range and is ideal for receiver protection and low loss, high power limiter applications. It features low thermal resistance (50oC/W) and low capacitance (0.60 pF).

  6. Hyperabrupt Junction Tuning Varactor Diode: SMV1771-040LF
    9/18/2013

    This varactor diode is ideal for use in low noise and wideband UHF and VHF VCOs, as well as in high volume, low-cost battery powered tuning circuits in military, automotive, and consumer markets. It features low series resistance and a high capacitance ratio, making it ideal for use in in low-phase noise VCOs in wireless systems at frequencies up to and above 2.5 GHz. For more information, download the datasheet.

  7. Enhance Download Data Rates: DRx Front-End-Modules
    4/1/2015

    Skyworks DRx front-end-modules have been designed to improve receiver sensitivity and data throughput in 3G/4G multimode cellular tablets and handsets, while also reducing Rx noise figure. The FEMs are comprised of low loss RF switches, as well as receive SAW filters and low noise amplifiers.

  8. XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter
    7/23/2007
    Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier
  9. RF5725 - 3.3 V, Single-Band Front-End Module
    3/12/2009

    The RF5725 is a single-chip integrated front-end module (FEM) for high performance WLAN applications in the 2.4GHz to 2.5GHz ISM band. This FEM greatly reduces the number of external components, minimizing footprint and assembly cost of the overall 802.11b/g solution. The RF5725 has an integrated b/g power amplifier, LNA, a Coupler Power detector, and TX filtering. It also is capable of switching between WLAN RX, WLAN TX, and BTH RX/TX operations. This device is manufactured using GaAs HBT and pHEMT processes on a 3mmx3mmx0.5mm 16-pin QFN package. This module meets or exceeds the RF front-end needs of 802.11b/g WLAN RF systems.

  10. High Gain GaAs MMIC Buffer Amplifiers
    3/8/2007
    Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively