High Gain GaAs MMIC Buffer Amplifiers
Mimix Broadband, Inc. provides two gallium arsenide (GaAs)
monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
Front End Module (FEM) for ISM Band Applications: RFFM6403
This front end module is an ideal solution for applications involving wireless automatic metering, portable battery powered equipment, Smart Energy, the 400 MHz ISM band, and other areas that require a solution that complies with the need for size reduction and a reduction in the number of components outside of the core chipset.
Front End Module For ZigBee®/Smart Energy Applications: RF6525
RFMD's highly integrated RF6525 FEM meets or exceeds the system requirements of ZigBee® applications operating in the 2.4 GHz - 2.5 GHz frequency band and supports multiple applications, including smart energy/advanced metering infrastructure (AMI), home area network (HAN), wireless ZigBee® home automation, portable battery powered equipment, and general 2.4 GHz ISM band systems.
SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevies' SNA-300 is a GaAs monolithic broadband amplifier in die form. at 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA.
Silicon RFIC Wideband Amplifier (UPC2776TB-E3-A)
NEC's UPC2776TB is a Silicon Monolithic integrated circuit
which is manufactured using the NESAT™III process. This
device is suitable for wide band IF blocks due to its high gain
and flat response. The UPC2776TB is pin compatible and
has comparable performance as the larger UPC2776T, so it
is suitable for use as a replacement to help reduce system
size. The IC is housed in a 6 pin super minimold or SOT-363
RF5725 - 3.3 V, Single-Band Front-End Module
The RF5725 is a single-chip integrated front-end module (FEM) for high performance WLAN applications in the 2.4GHz to 2.5GHz ISM band. This FEM greatly reduces the number of external components, minimizing footprint and assembly cost of the overall 802.11b/g solution. The RF5725 has an integrated b/g power amplifier, LNA, a Coupler Power detector, and TX filtering. It also is capable of switching between WLAN RX, WLAN TX, and BTH RX/TX operations. This device is manufactured using GaAs HBT and pHEMT processes on a 3mmx3mmx0.5mm 16-pin QFN package. This module meets or exceeds the RF front-end needs of 802.11b/g WLAN RF systems.
AMI/AMR Smart Energy Tx/Rx Front End Modules: RF65x9 Series
RFMD’s AMI/AMR Smart Energy Tx/Rx Front End Modules consists of three separate models ideal for wireless automatic metering, single chip RF front end module, portable battery powered equipment, and 868MHz/900MHz ISM band applications.
Miniature 0402 Schottky Diodes For Detector Applications
Skyworks Solutions, Inc. has introduced two miniature 0402 Schottky diodes for detector applications in handsets, WLAN, CATV Satcom, land mobile radios and infrastructure platforms. These small form factor and low profile discrete solutions in SMT packages are ideal for general purpose detector, sampling and mixer circuits. The new general market diodes are designed for high-volume commercial and industrial OEMs, ODMs and contract manufacturers – featuring low inductance, a small footprint and high barrier height.
Front End Module: RF3482
The RF3482 FEM is a single-chip integrated front end module (FEM) for high-performance WLAN applications in the 2.4GHz to 2.5GHz ISM band.
Thin Film Circuit Manufacture
A mature in-house facility supplying thin film circuits to the Microwave industry since the 1980’s