semiconductors-ics-products

  1. Silicon MMIC Amplifier (BGA2001 T/R)
    1/21/2009
    Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
  2. 3.6V, Single-Band Front End Module: RFFM3482E
    12/8/2011
    RFMD's RFFM3482E is a single-band front end module (FEM) ideal for applications involving IEEE802.11b/g/n WiFi, 2.5GHz ISM Bands, portable battery-powered equipment, WiFi systems, and more. Its size is ideal for a 802.11b/g/n front end design and greatly reduces the number of components outside of the core chipset. This FEM has the ability to switch between WiFi Rx, WiFi Tx, and BTH Rx/Tx operations. An Rx balun, a b/g/n power amplifier, and a directional power detector have all been integrated into the RFFM3482E.
  3. XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
    4/7/2005
    Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
  4. Wi-Fi Front End Modules
    3/27/2009
    RF Micro Devices, Inc. recently expanded its Wi-Fi product portfolio to include three new front end modules (FEMs): the RF5325, RF5345 and RF5725. The highly integrated FEMs are designed to address the need for high performance and continued size reductions in mobile Wi-Fi applications, including handsets, personal navigation devices (PNDs), digital cameras and MP3 players.
  5. XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
    6/7/2005
    Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
  6. XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
    5/11/2007
    Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.
  7. ALM-1712 - GPS RF Front End Module With FBAR Filters
    12/2/2008
    Avago Technologies’ ALM-1712 is a GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity.
  8. Thin Film Circuit Manufacture
    3/16/2006
    A mature in-house facility supplying thin film circuits to the Microwave industry since the 1980’s
  9. Thin-Film Low Pass Filter (478-2909-1-ND)
    1/21/2009
    The LP0603 ITF (Integrated Thin Film) Lead-Free LGA Low Pass Filter is based on thin-film multilayer technology. The technology provides a miniature part with excellent high frequency performance and rugged construction for reliable automatic assembly.
  10. MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
    7/2/2008
    The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and space screening is available.