semiconductors-ics-products

  1. 14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD
    7/18/2008
    Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
  2. PIN Diode for Transmit/Receive Switching Applications: SMP1304-085LF
    5/1/2012

    This high power shunt PIN diode is ideal for high volume switch and attenuator applications in the 10 MHz to 6 GHz frequency range. It features 40 °C/W thermal resistance, 0.3 pF capacitance, low distortion performance, and more. This PIN diode is suitable for 100 W continuous wave T/R switches because of its 3 W dissipation power rating. It’s ideal for the infrastructure and land mobile radio markets.

  3. E-pHEMT MMIC (75 Ω) Product Line
    4/30/2010
    This MMIC line that comes with AE- prefix part number shows optimized performance for 75 ohm communication systems delivering surprisingly low distortion, high efficiency, and low noise. The varieties of RFHIC amplifiers in this product line are available to support various different types of market demands.
  4. GPS Filter-LNA-Filter Front-End Module: ALM-2712
    3/29/2010
    Avago Technologies’ GPS Filter-LNA-Filter Front-End Module: ALM-2712 is an ultra low-noise GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity.
  5. 3.6V, Single-Band Front End Module: RFFM3482E
    12/8/2011
    RFMD's RFFM3482E is a single-band front end module (FEM) ideal for applications involving IEEE802.11b/g/n WiFi, 2.5GHz ISM Bands, portable battery-powered equipment, WiFi systems, and more. Its size is ideal for a 802.11b/g/n front end design and greatly reduces the number of components outside of the core chipset. This FEM has the ability to switch between WiFi Rx, WiFi Tx, and BTH Rx/Tx operations. An Rx balun, a b/g/n power amplifier, and a directional power detector have all been integrated into the RFFM3482E.
  6. High Power PIN Diodes: BRO399-11A
    7/28/2011

    Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF and SMP1371-087LF are optimized for use as series diodes. SMP1302-085LF is optimized for use as a shunt diode. Due to their thermally-enhanced package designs, these diodes have very low thermal resistance which enables them to handle very large input power.

  7. Front-End Module (FEM): AFEM-S102
    4/14/2011
    Avago Technologies AFEM-S102 Front-End Module (FEM) integrates an SP3T antenna switch, TX path Coupler and FBAR Co-Existence Filter for applications with IEEE 802.11 b/g/n WiFi and Bluetooth modulation.
  8. XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter
    7/23/2007
    Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier
  9. E-pHEMT MMIC - AE312
    6/29/2009
    AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
  10. SNA-300: DC-3 GHz Cascadable GaAs MMIC Amplifier
    7/15/2005
    Sirenza Microdevies' SNA-300 is a GaAs monolithic broadband amplifier in die form. at 1950 MHz, this amplifier provides 22dB of gain when biased at 35mA.