semiconductors-ics-products

  1. 2-4 GHz Packaged Amplifier RFICs
    11/4/2005
    2-4 GHz Packaged Amplifier RFICs
  2. Thin Film Dual Resistor Networks - MSDR3 Series
    12/19/2006

    The MSDR series dual center-tapped chip resistor offers the high stability, low noise, and low T.C.R./T.C. tracking of thin film while providing greater flexibility in hybrid designs

  3. 90W GaN Power Module
    11/12/2013

    M/A COM’s MAMG-001214-090PSM is an L-band 90 W surface mount GaN power module ideal for pulsed radar applications. It features a very compact size (14 x 24 mm2), GaN on SiC D-mode transistor technology, up to 3 ms pulse width and 10% duty cycle, and more.

  4. 2.4 GHz Front End Module for Mobile Devices, Game Consoles, and Tablets
    2/25/2015

    The SKY85203-11 is a front-end module designed for 802.11b/g/n set-top boxes, mobile devices, gaming consoles, and tablets. It integrates an SP3T switch and an LNA with a bypass mode. The module comes in a QFN, 12-pin 2 x 2 x 0.45mm package and has a 14dB receive gain, a noise figure of 2.1dB, and a Transmit/Bluetooth® path loss of 0.7dB.

  5. E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
    10/12/2010
    Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.
  6. ALM-1712 - GPS RF Front End Module With FBAR Filters
    12/2/2008
    Avago Technologies’ ALM-1712 is a GPS front-end module that combines a low-noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity.
  7. Surface-Mount Silicon Hyperabrupt Tuning Varactor Diodes
    9/15/2011

    Skyworks Solutions, Inc. has introduced two miniature 0402 varactor diodes for VCO, phase noise, frequency control and voltage tuned filter applications including WLAN, CATV low noise block, energy management, wireless infrastructure and military devices. These small form factor, low profile plastic surface mount technology packaged diodes offer a discrete solution and are ideal for applications requiring low resistance and low capacitance over a narrow 0 to 5 volt range. These general market, miniature diodes offer a reduced footprint and combine both low series resistance and high tuning ratio in an industry-standard package.

  8. E-pHEMT MMIC - AE314
    6/29/2009

    AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.

  9. MMA-022025B Broadband MMIC Power Amplifier
    4/19/2007
    The MMA-022025B is a 2 - 20GHz broadband MMIC amplifier with typical 27dBm output power at 1 dB compression point. The MMIC chip is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
  10. XU1004-BD: 32 To 45 GHz GaAs MMIC Transmitter
    7/23/2007
    Mimix Broadband’s 32 to 45 GHz GaAs MMIC transmitter has a +14.0 dBm output third order intercept across the band. This device is a balanced, resistive pHEMT mixer followed by a distributed output amplifier and includes an integrated LO doubler and LO buffer amplifier