Custom MMIC has developed two new LNA MMIC that operate in the 6-18 GHz frequency and feature a 1.5 dB noise figure
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
Silicon MMIC Wideband Amplifier (UPC2712TB-E3-A)
NEC's UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are designed
for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD
Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC
uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
37 To 40 GHz 1 W Power Amplifier (MMIC Die): AMMC-6442
Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.
E-pHEMT MMIC For Optical Networks
Optical Networks are one of the key infrastructures for the broadcasting and telecommunication industry. FTTH, fiber to the home, is the basis for the optical cable installation as well. RF MMIC devices are used in many of the applications for converting optical signals to RF signals and vice versa. CATV broadcasting, satellite broadcasting, high speed internet, IPTV(Internet Protocol Television), VOD(Video on Demand) and other telecommunication applications can be converged through optical networks and is now expanding its market in various territories.
Thick Film Chip Attenuators
Wire and ribbon bondable and Flipchip thick film chip attenuators, printed and fired on 96% alumina. Provides attenuation accuracy for frequencies through 10 Ghz. Double layer terminations provide additional bonding surface. Abrasive trimming ensures optimum resistor stability
Thin-Film Directional Couplers (CP0402A3200ALTR)
The ITF High Directivity LGA Coupler is based on thin-film multilayer
technology. The technology provides a miniature part with excellent high
frequency performance and rugged construction for reliable automatic
GPS Filter-LNA Front-End Module: ALM-1912
The Avago ALM-1912 is a GPS front-end module that combines a GPS FBAR filter with High-gain Low-noise amplifier (LNA). The LNA uses Avago's proprietary GaAs enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity.
ZigBee®/Smart Energy Front-End Modules
These 2.4 GHz RF Front-End-Modules (FEMs) have been designed for use in ZigBee®/smart energy and 802.15.4 applications. Their integrated RF blocks operate over a supply voltage range of 2.0 V to 3.6 V, allowing them to be used in battery-powered applications. These FEMs feature integrated inter-stage matching and harmonic filter, and digital controls compatible with 1.6 – 3.6 volt (V) complementary metal oxide semiconductor levels.