SNA-500: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-500 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 19dB of gain when biased at 65mA and 5.0V.
SNA-200 DC-6.5 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices’ SNA-200 is a GaAs monolithic
broadband amplifier (MMIC) in die form. At 1950 MHz, this
amplifier provides 16dB of gain when biased at 50mA.
XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point
across much of the band. The device also includes an on-chip temperature compensated output power detector.
MHA-333833A-Q5: 3300 To 3800 MHz Fully Matched MMIC Power Amplifier
The MMA-333833-Q5 is a high linearity InGaP HBT MMIC amplifier. It is in a low cost QFN 5X5mm Green Package. Applications include the driver and the output stage of the power amplifiers for WLAN and WiMax infrastructure base
stations and access points. The third order intercept performance of the MMA-333833A-Q5 is excellent and is typically 11 dB above the 1 dB gain compression point. It provides +33 dBm P1dB, +26 dBm Pave @2.5 % EVM under 802.16/64 QAM input signal, +44 dBm OIP3 and 25 dB gain.
GaN MMIC Power Amplifiers
These GaN MMIC power amplifiers are ideal for applications involving test instrumentation, general communications, and general radar. Two models are featured below, a 25 Watt PA covering the 2-6 GHz frequency range, and an 8 Watt PA covering the 2-20 GHz frequency range.
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.