Products and Services
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33-45 GHz GaAs MMIC Low Noise Amplifier
7/17/2013
This low noise amplifier (LNA) features a small size and low power consumption, making it ideal for point to point/multipoint radios, military and space communications, and other EW and communications systems.
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XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier
12/13/2002
Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
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E-pHEMT MMIC - AE314
6/29/2009
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
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37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D
2/23/2023
The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.
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E-pHEMT MMIC - AE312
6/29/2009
AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
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0.5 – 8.0 GHz Low Noise MMIC Amplifier: CMA-83LN+
1/16/2019
Mini Circuits offers the CMA-83LN+ low noise MMIC amplifier operating from 0.5 to 8.0 GHz for sensitive, high-dynamic range receiver applications. The amplifier offers flat gain and a P1dB of 20.3 dBm at 2 GHz with a noise figure of 1.3 dB. It operates on a single 5 V or 6 V supply and is well matched f to 50 ohms.
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GaN MMIC Amplifiers/Transistors
10/31/2012
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
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MMIC (75 ohm)
12/29/2008
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
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XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier
9/17/2003
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
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5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D
1/15/2020
The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.