Products and Services
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High Gain GaAs MMIC Buffer Amplifiers
3/8/2007
Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
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33-45 GHz GaAs MMIC Low Noise Amplifier
7/17/2013
This low noise amplifier (LNA) features a small size and low power consumption, making it ideal for point to point/multipoint radios, military and space communications, and other EW and communications systems.
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MMA-022030B Broadband MMIC Power Amplifier
4/19/2007
The MMA-022030B is a 2 - 20GHz broadband MMIC power amplifier with nearly 1W output power (P-2dB). It is realized in advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
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XP1005 Four Stage 35 to 43 GHz GaAs pHEMT MMIC Power Amplifier
5/27/2003
Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier...
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XP1008 11 To 16 GHz GaAs MMIC Power Amplifier
6/7/2005
Mimix Broadband’s three stage 11.0-16.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.5 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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Silicon MMIC Amplifier (BGA2003 T/R)
1/21/2009
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
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25 To 33 GHz 0.7W Power Amplifier MMIC: AMMC-6431
3/29/2010
The 25-33 GHz 0.7W Power Amplifier MMIC: AMMC-6431 from Avago Technologies is a MMIC power amplifier designed for use in wireless transmitters that operate within a 25 GHz and 33 GHz range. At 32 GHz, it provides 28.5 dBm of output power (1) and 19.5 dB of small-signal gain from a small easy to-use device.
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CMM4000-BD - 2 To 18 GHz GaAs MMIC Buffer Amplifier
6/7/2007
Mimix Broadband’s 2 to 18 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity
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37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D
2/23/2023
The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.
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5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D
1/15/2020
The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.
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