MHA-333833A-Q5: 3300 To 3800 MHz Fully Matched MMIC Power Amplifier
The MMA-333833-Q5 is a high linearity InGaP HBT MMIC amplifier. It is in a low cost QFN 5X5mm Green Package. Applications include the driver and the output stage of the power amplifiers for WLAN and WiMax infrastructure base
stations and access points. The third order intercept performance of the MMA-333833A-Q5 is excellent and is typically 11 dB above the 1 dB gain compression point. It provides +33 dBm P1dB, +26 dBm Pave @2.5 % EVM under 802.16/64 QAM input signal, +44 dBm OIP3 and 25 dB gain.
29MPA0373 26.0-31.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically
provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and
space screening is available.
Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series
RFMD’s RFVC182X family of narrowband MMIC voltage controlled oscillators (VCOs) with integrated RF output buffer amplifiers have excellent temperature, shock, and vibration performance. These VCOs are suitable for applications in the 4.45 to 8.7GHz frequency range. All products in this family of VCOs provide POUT >8dBm from a +3V single supply and deliver low phase noise performance with minimum power consumption. Each VCO comes in a compact, RoHS compliant 4.0 x 4.0mm QFN package.
XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
Silicon MMIC Wideband Amplifier (UPC2712TB-E3-A)
NEC's UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are designed
for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
Wideband GaAs MMIC Distributed Amplifier: CMD173
This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.
75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F
The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
SNA-500: DC-3 GHz Cascadable GaAs MMIC Amplifier
Sirenza Microdevices' SNA-500 is a GaAs monolithic broadband amplifier in die form. This amplifier provides 19dB of gain when biased at 65mA and 5.0V.