Products and Services
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Broadband Fully Integrated Matched Low-Noise Amplifier MMIC: MGA-21108
12/3/2009
The Avago MGA-21108 is a fully integrated GaAs Low Noise Amplifier, LNA, MMIC for use in the 1.5GHz to 8GHz band.
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XP1009 17 To 21 GHz GaAs MMIC Power Amplifier
6/7/2005
Mimix Broadband’s two stage 17.0-21.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.0 dBm
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13.5 To 16.0 GHz GaAs MMIC Power Amplifier - XP1057-BD
7/18/2008
Mimix Broadband’s three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with +48.0 dBm output third order intercept.
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800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
1/21/2009
The ZAMP002 is an low current high performance RF amplifier designed for L band and IF applications. Although the ZAMP002 has been designed primarily for DBS applications the ZAMP002 is capable of extending to frequencies of 2.5GHz so it has a good fit with various applications. An additional benefit of the ZAMP002 is it’s rising gain characteristic, this has been designed to counteract the gain losses found at the higher frequencies.
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MMICs
4/10/2008
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
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75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F
9/4/2019
The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
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E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
10/12/2010
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.
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DC-22 GHz Distributed Amplifier: CMD240C4
7/1/2020
Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.
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MMA-121630: 12 To 16 GHz Fully Matched MMIC Power Amplifier
7/2/2008
The MMA-121630 is a 12-16 GHz GaAs MMIC amplifier. Small signal gain is typically 26.0 dB across band. It typically provides 31 dBm power at P-1dB. This part can be used in VSAT, point to point,and defense applications, Hi-rel and space screening is available.
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MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip
7/2/2008
The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of 30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
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