60 GHz Power Amplifier: HHPAV-433
The HHPAV-433 Power Amplifier covers the frequency range from 59.5 to 60.5 GHz and is usable over the range of 58 to 64 GHz. The amplifier has an output power of +28.5 Psat and 18 dB gain. MMIC technology is employed for high reliability and repeatability employing one die. A single +6.0V bias is used to power up the amplifier. An onboard voltage regulator and bias sequencing circuitry provide the proper biasing for the unit.
High Gain GaAs MMIC Buffer Amplifiers
Mimix Broadband, Inc. provides two gallium arsenide (GaAs)
monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD
Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC
uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
MMIC Amplifiers For WiMAX Applications
Microwave Technology, Inc (MwT), an IXYS Corporation, announces a new family of MMICs for WiMAX(802.16 d/e), WiFi, and wireless infrastructure applications
MMIC Wideband Amplifier (BGM1014 T/R)
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems
designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output
power at saturation operating from 13.50 to 14.50 GHz frequency...
Silicon MMIC Amplifier (BGA2003 T/R)
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
SBW-5089 DC-8 GHz Cascadable InGaP/GaAs MMIC Amplifier
Sirenza Microdevices’ SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
GaN MMIC Amplifiers/Transistors
Northrop Grumman’s first three entries in their GaN MMIC Amplifiers have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market.
Wideband GaAs MMIC Distributed Amplifier: CMD173
This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.