Products and Services
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Wideband GaAs MMIC Distributed Amplifier: CMD173
11/15/2012
This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.
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800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
1/21/2009
The ZAMP002 is an low current high performance RF amplifier designed for L band and IF applications. Although the ZAMP002 has been designed primarily for DBS applications the ZAMP002 is capable of extending to frequencies of 2.5GHz so it has a good fit with various applications. An additional benefit of the ZAMP002 is it’s rising gain characteristic, this has been designed to counteract the gain losses found at the higher frequencies.
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MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip
7/2/2008
The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of 30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
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DC-22 GHz Distributed Amplifier: CMD240C4
7/1/2020
Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.
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XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier
12/13/2002
Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
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MMA-022020B Broadband MMIC Power Amplifier
4/19/2007
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
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37.5 - 42.5 GHz 10 Watt GaN Amplifier: QPA4246D
2/23/2023
The QPA4246D is a high-power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band.
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E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
10/12/2010
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.
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CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
3/8/2006
The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
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MMICs
4/10/2008
REMEC D&S designs high-performance, cost-effective MMICs, including low-noise and high-power amplifiers, switches, phase shifters, detectors, and attenuators from RF, microwave, and millimeter wave (mmWave) bands for next generation space, missile defense, communication, and unmanned aerial vehicle applications.
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