14 To 16 GHz GaAs MMIC Power Amplifier - XP1058-BD
Mimix Broadband’s four stage 14.0-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +37.0 dBm saturated output power. This MMIC
uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity.
MMA-022020B Broadband MMIC Power Amplifier
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in
advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications
XP1001 26.0-40.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +39.0 dBm. This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
37 To 40 GHz 1 W Power Amplifier (MMIC Die): AMMC-6442
Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.
GaN MMIC Power Amplifier: HMC7149
The HMC7149 is 10 watt GaN MMIC amplifier covering the 6-18 GHz frequency range. It’s ideal for applications involving general communications, test instrumentation, and radar.
60 GHz Power Amplifier: HHPAV-433
The HHPAV-433 Power Amplifier covers the frequency range from 59.5 to 60.5 GHz and is usable over the range of 58 to 64 GHz. The amplifier has an output power of +28.5 Psat and 18 dB gain. MMIC technology is employed for high reliability and repeatability employing one die. A single +6.0V bias is used to power up the amplifier. An onboard voltage regulator and bias sequencing circuitry provide the proper biasing for the unit.
1.5 GHz MMIC Amplifier (UPC2746TB-E3)
The µPC2745TB and µPC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile
communications. These low current amplifiers operate on 3.0 V (1.8 V MIN.).
MMIC (75 ohm)
RFHIC's MMIC(Monolithic Microwave Integrated Circuit) product line is built from either GaAs InGaP Heterojunction Bipolar Transistor (HBT) structure or GaAs Metal Epitaxial Semiconductor Field Effect Transistor (MESFET) structure.
E-pHEMT MMIC For Femtocell, RF-Metering, RFID And Wi-Fi
Recent improvements on the CMOS Silicon process introduced many one-chip solutions to the market. DSP, Analog/Digital converter, Digital/Analog converter, Up/Down converter, VCO and PLL Synthesizers are one of those one-chip solutions in the market today. However, CMOS has some drawbacks in higher power levels of 10dBm+ and having a high noise figure.