IMS News

  1. Mil/aero System Designers Offered More Solutions And Design Tips From Custom MMIC At IMS 2017
    6/2/2017

    Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), is exhibiting at the International Microwave Symposium 2017 in Honolulu, Hawaii in booth #1355. IMS 2017 attendees whose core business or interests involve high performance MMICs are encouraged to visit with the Custom MMIC team and learn of their new GaAs and GaN MMIC innovations.

  2. GVD Corporation Attends The 5G/IoT Pavilion At IMS 2017
    6/2/2017

    GVD Corporation, an MIT technology-inspired polymer coating company, is pleased to announce they’ll be a part of the 5G/IoT Pavilion in booth 848 at the International Microwave Symposium in Honolulu, Hawaii, June 6th-8th. They will be unveiling their highly reliable environmental coating for microwave electronics which eliminates the need for hermetic packaging.

  3. Substrate Processing Becoming Key Link In Supply Chain: More At IMS 2017
    6/2/2017

    Laser Services, an ISO 9001:2008 - AS9100C and ITAR registered laser job shop, is announcing their presence at the International Microwave Symposium next week. In the 5G/IoT Pavilion Booth 848 at IMS 2017 in Honolulu June 6th - 8th, 2 associated brands will be there to assist with unique substrate processing requirements.

  4. Mil/Aero System Designers Offer More Solutions And Design Tips From Custom MMIC At IMS 2017
    6/2/2017

    Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), is exhibiting at the International Microwave Symposium 2017 in Honolulu, Hawaii in booth #1355. IMS 2017 attendees whose core business or interests involve high performance MMICs are encouraged to visit with the Custom MMIC team and learn of their new GaAs and GaN MMIC innovations.

  5. Vaunix Introduces Latest Attenuators And Signal Generators At IMS 2017
    6/2/2017

    Vaunix, a leading developer of programmable wireless test devices, will be introducing their latest attenuators and signal generator in the 5G/IoT Pavilion at booth #848 at IMS 2017 in Honolulu, Hawaii, June 6th-8th.

  6. Qorvo® Enables Next-Generation 5G Wireless With First 39GHz Dual-Channel GaN FEM
    6/1/2017

    Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced the industry’s first Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end module (FEM) for the 39GHz 5G frequency band.

  7. 18 - 110 GHz Circulators Provide Up To 200W Of Power Handling
    6/1/2017

    Smiths Interconnect, a division of Smiths Group plc and supplier of RF, microwave, and millimeter-wave components and subsystems from 18 GHz to 325 GHz, announces the Millitech brand HPC Series of high power circulators.

  8. Qorvo's New GaN On SiC PAs Achieve Breakthrough Performance And Flexibility
    5/26/2016

    Qorvo has announced the introduction of three new gallium nitride (GaN) power amplifiers (PAs) that achieve industry-leading power, power added efficiency (PAE) and gain at the IMS 2016. Qorvo's newest GaN PAs are optimized for use in military radar, communications and electronic warfare systems.

  9. IDT Introduces New Constant Linearity Technology With Launch Of Latest RF Digital VGA
    5/26/2016

    With K(LIN)™ constant linearity technology, F1455 Series Variable Gain Amplifiers from IDT maintain 38 dBm output third order intercept point for first 12 dB of gain control range. These devices feature broadband 1,400–2,300 MHz operation, 4 dB NF at max gain (2,000 MHz), and 32 dB flat, temperature invariant max gain. The F1455 is available in a 6 x 6 mm 28-QFN package, and is sampling now to customers. IDT representatives will be available to discuss K(LIN) and other innovations at IDT's booth number 316 at IMS2016, Moscone Center, May 24 - 26.

  10. NXP Launches GaN RF Power Transistors Optimized For Doherty Amplifiers In Cellular Base-Stations
    5/26/2016

    NXP Semiconductors N.V. has announced the expansion on their portfolio of 48V gallium nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base-stations. NXP is showcasing the new GaN transistors in booth 1839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (23-26 May).