Event News

31. Agilent To Host Webinar On Cognitive Radio And SDR Design And Test Challenges
    9/11/2009
    Agilent Technologies will be holding a free Webinar titled Addressing the Design & Verification Challenges of Cognitive Radio and SDR on October 7, 2009 at 1:00 P.M. (EST). The webcast will discuss how simulation and test can be combined to address Cognitive Radio and Software-Defined Radio physical-layer design and test challenges.
32. Narda Microwave-East To Exhibit AT ECOC 2009
    9/9/2009
    Narda will exhibit its 40 and 100G modulator drivers during ECOC 2009 in Vienna, Austria, September 21-23, 2009, at booth #612. A new driver designed for 40G and 100G DQPSK transponders applications, Model FO-MDA-20-25DD-1, will be featured...
33. Keithley To Explore Challenges Of LTE Testing In Free Workshop At EuMW
    9/8/2009
    Keithley Instruments, Inc. will be presenting a two-hour workshop entitled "LTE testing - understanding how your LTE radio is performing" on the first day of European Microwave Week (EuMW), which takes place in Rome, Italy, from September 29 to October 1, 2009.
34. Agilent Technologies Introduces Three-Channel, USB Modular SMU
    9/8/2009
    Agilent Technologies Inc. introduced a three-channel source measure unit (SMU) that can simultaneously provide power and perform measurements in applications such as parametric testing of diodes, LEDs, CMOS integrated circuits and other semiconductor devices...
35. Maury Microwave And Agilent Enable Approach To Measure And Simulate Nonlinear Component Behavior At All Load Impedances
    9/3/2009
    During European Microwave Week, September 28 - October 2 in Rome, Italy, Maury Microwave will conduct live demonstrations at Agilent's booth (stand #539) of two unique breakthrough applications for the NVNA and PNA-X; 1) Maury Load Pull with NVNA X-parameter data extraction providing a simple, effective and instantaneous path from measurement to circuit design, with "drag-and-drop" compatibility to ADS, and 2) PNA-X based noise parameter measurements (patent pending) that yield 100x speed improvement and enhanced accuracy versus the traditional method...
36. MTT-S 2009: Notes From The Exhibition Floor -- Part 2
    7/20/2009
    In this article, we conclude our booth-by-booth tour of the IEEE MTT-S 2009 International Microwave Symposium (IMS), highlighting the products, news, and industry developments from the show...
37. RFMD Expands Multi-Market Product Catalog To Include High Isolation Broadband Switches
    6/16/2009
    RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, recently announced the expansion of the Company's RF component portfolio to include four new high isolation broadband switches: the RF3021, RF3023, RF3024 and RF3025.
38. MTT-S 2009: M/A-COM Technology Solutions Introduces New LTE Circulators And Isolators
    6/15/2009
    M/A-COM Technology Solutions, Inc. (M/A-COM Tech), a leading provider of innovative microwave and RF design solutions, is introducing a new family of LTE and TD-SCDMA bandwidth solutions for its Circulator and Isolator products.
39. MTT-S 2009: Aeroflex Expands Its Flexible, Modular PXI Platform With New High-Power Signal Generators For RF Component Test
    6/15/2009
    Aeroflex recently announced it expanded its flexible PXI modular test platform with the addition of two new 3020 Series high-power and compact RF signal generators. The 3020 Series are compact, high-precision PXI modular RF signal generators with integrated dual-channel arbitrary waveform generators ideally suited for R&D manufacturing and design verification of RF components and systems.
40. MTT-S 2009: Infineon Introduces High-Power LDMOS Transistor Family For Cellular Base Stations
    6/12/2009
    At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG recently introduced a family of high-power LDMOS transistors for design of broadband wireless network base stations. With industry leading power levels up to 300W and video bandwidth exceeding 90 MHz, the new transistors fully support the high peak to average power ratios and high data rate specifications required for the evolution from 3G to 4G wireless networks.