Event News
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Maury Microwave And Agilent Enable Approach To Measure And Simulate Nonlinear Component Behavior At All Load Impedances
9/3/2009
During European Microwave Week, September 28 - October 2 in Rome, Italy, Maury Microwave will conduct live demonstrations at Agilent's booth (stand #539) of two unique breakthrough applications for the NVNA and PNA-X; 1) Maury Load Pull with NVNA X-parameter data extraction providing a simple, effective and instantaneous path from measurement to circuit design, with "drag-and-drop" compatibility to ADS, and 2) PNA-X based noise parameter measurements (patent pending) that yield 100x speed improvement and enhanced accuracy versus the traditional method...
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MTT-S 2009: Notes From The Exhibition Floor -- Part 2
7/20/2009
In this article, we conclude our booth-by-booth tour of the IEEE MTT-S 2009 International Microwave Symposium (IMS), highlighting the products, news, and industry developments from the show...
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MTT-S 2009: M/A-COM Technology Solutions Introduces New LTE Circulators And Isolators
6/15/2009
M/A-COM Technology Solutions, Inc. (M/A-COM Tech), a leading provider of innovative microwave and RF design solutions, is introducing a new family of LTE and TD-SCDMA bandwidth solutions for its Circulator and Isolator products.
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MTT-S 2009: Aeroflex Expands Its Flexible, Modular PXI Platform With New High-Power Signal Generators For RF Component Test
6/15/2009
Aeroflex recently announced it expanded its flexible PXI modular test platform with the addition of two new 3020 Series high-power and compact RF signal generators. The 3020 Series are compact, high-precision PXI modular RF signal generators with integrated dual-channel arbitrary waveform generators ideally suited for R&D manufacturing and design verification of RF components and systems.
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MTT-S 2009: Infineon Introduces High-Power LDMOS Transistor Family For Cellular Base Stations
6/12/2009
At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG recently introduced a family of high-power LDMOS transistors for design of broadband wireless network base stations. With industry leading power levels up to 300W and video bandwidth exceeding 90 MHz, the new transistors fully support the high peak to average power ratios and high data rate specifications required for the evolution from 3G to 4G wireless networks.
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MTT-S 2009: Infineon Announces Dual LDMOS Integrated PAs For Doherty Architecture And Compact Cellular Amplifier Designs
6/12/2009
At the IEEE MTT-S International Microwave Symposium, Infineon Technologies AG recently introduced an industry first series of dual integrated LDMOS power amplifiers for wireless network base stations.
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MTT-S 2009: Infineon Launches LNA MMIC For Embedded FM Radio Antennae In Handsets
6/12/2009
Infineon Technologies AG recently released details on a wideband, low-power consumption Low Noise Amplifier (LNA) ideally suited for FM radio active antenna applications in mobile handsets.
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Tektronix Showcases New Products To Solve RF/Microwave Challenges At 2009 MTT-S IMS Show
6/10/2009
Tektronix, Inc., a leading, worldwide provider of test, measurement and monitoring instrumentation, announced the company will feature an extensive range of new and enhanced products and solutions at the 2009 International Microwave Symposium (IMS), June 7-12, in booth #2624.
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MTT-S 2009: M/A-COM Technology Solutions Announces Four Gold LDMOS Transistors
6/10/2009
M/A-COM Technology Solutions, Inc. (M/A-COM Tech), a leading provider of innovative microwave and RF design solutions, is introducing three new lateral diffused MOSFET (LDMOS) devices for L-Band radar and one new LDMOS device for avionics applications.
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MTT-S 2009: M/A-COM Technology Solutions Introduces Broadband Surface-Mount Switches
6/10/2009
M/A-COM Technology Solutions, Inc. (M/A-COM Tech), a leading provider of innovative microwave and RF design solutions, is introducing a new family of surface mount broadband 2 – 20 GHz HMIC PIN diode switches for Test Instrumentation, Satellite, and other wide frequency range applications.
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