Hittite To Introduce 12 New Products At IMS 2009
Chelmsford, MA -- Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, today announced that it will introduce 12 new products at the 2009 IEEE MTT-S International Microwave Symposium and Exhibition. IMS 2009 will be held at the Boston Convention and Exhibition Center, Boston, MA, June 9 - 11, 2009. During the exhibition, these and other Hittite Microwave products will be on display. A live product demonstration area will showcase our latest products, and a HMC-T2100 Signal Generator product raffle will be held at our booth, #1007.
Enter to Win!
Visit our booth and enter the drawing to win a new HMC-T2100 Synthesized Signal Generator. The HMC-T2100 is a compact but powerful signal generator which covers 10 MHz to 20 GHz, and is easily configured for both laboratory and high volume testing environments, for only $7,998 each. Several HMC-T2100 and HMC-T2000 synthesizers will be featured in our live demonstration area. One lucky winner will be selected at random and announced in our booth at 3:00 pm EDT on June 10, 2009.
Live Product Demonstration Area
Hittite's booth will incorporate a live product demonstration area where our engineers will display our latest products including:
The HMC701LP6CE and the HMC702LP6CE are the latest additions to Hittite's PLL product line of integrated fractional-N synthesizer ICs designed to cover a wide range of applications from 10 kHz to 14 GHz, particularly those sensitive to phase noise and signal jitter. Each of these feature packed fractional-N synthesizers feature a 16-bit fractional divider, 24-bit delta-sigma modulator, 14-bit reference path divider, ultra low noise phase frequency detector (PFD), a precision controlled charge pump and extensive access to various modes of operation via a GPO (General Purpose Output) bus.
The HMC714LP5E is a new, industry leading, integrated Dual Channel RMS Power Detector, which is capable of simultaneously measuring the instantaneous power (RF envelope) and the average true RMS power of any input RF signal from 0.1 to 3.9 GHz. Designed for high accuracy RF power signal measurement and control applications and ideal for dual-channel wireless infrastructure systems, the HMC714LP5E can be used with input signals having RMS values from -55 to +15 dBm and large crest factors with no accuracy degradation. Dual outputs provide a read of 'true-RMS' power with excellent channel matching and low temperature drift. Operating from a +5V supply, the HMC714LP5E is specified for operation from -40°C to +85°C, and is supplied in a 5x5 mm leadless SMT package.
The HMC-C072 is an industry leading, connectorized Ultra Low Phase Noise Amplifier module designed to operate between 6 and 12 GHz, with 11 dB of gain, 4.5 dB noise figure and up to +22 dBm of output power from a single supply of +7V. The ultra low phase noise contribution of -167 dBc/Hz at 1 KHz offset enables superior modulation accuracy within transceiver architectures. The wideband distributed amplifier I/Os are internally matched to 50 Ohms and DC blocked for robust performance.
Complete information will also be available on the following newly released products:
Low Noise Amplifiers
The HMC566LP4E is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier that is ideal for building transmit and receive signal chains in microwave radios. Housed in a SMT 4x4mm plastic package and operating from 28 to 36 GHz, the HMC566LP4E provides 21 dB of small signal gain, 2.8 dB of noise figure and output IP3 of +24 dBm. This self-biased LNA is ideal for SMT based assemblies due to its compact size, single +3V supply operation, and DC blocked RF I/Os. This versatile LNA can also be used to drive the LO port of many of Hittite's balanced, I/Q, and sub-harmonic mixers. The HMC566LP4E is also available in die form as the HMC566.
The HMC751LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier which operates from 17 to 27 GHz and provides 25 dB of small signal gain, 2.2 dB noise figure and output IP3 of +25 dBm. The HMC751LC4 requires only 73 mA from a +4V single supply. P1dB output power of +13 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers.
The HMC752LC4 is a GaAs MMIC Low Noise Amplifier which operates from 24 to 28 GHz and provides 25 dB of small signal gain, 2.5 dB noise figure and output IP3 of +26 dBm, while requiring only 70 mA from a +3V supply. The P1dB output power of +13 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers.
The HMC753LP4E is a GaAs MMIC Wideband, high linearity Low Noise Amplifier in a leadless 4x4mm plastic SMT package which operates from 1 to 11 GHz. The amplifier provides up to 17 dB of small signal gain, 1.5 dB noise figure, and output IP3 of +30 dBm, while requiring only 55 mA from a +5V supply. Ideal for high capacity microwave radios, the P1dB output power of up to +18 dBm enables this LNA to function as a LO driver for many of Hittite's balanced, I/Q, and image reject mixers.
Ideal for test and measurement applications, and driving the LO port of many of Hittite's mixers, the HMC772LC4 is a GaAs MMIC HEMT Wideband Low Noise Amplifier which operates from 2 to 12 GHz, and is housed in a ceramic 4x4mm SMT package. The amplifier provides 15 dB of gain, 1.8 dB noise figure and +13 dBm of output power at 1 dB gain compression while requiring only 45 mA from a +4V supply. The HMC772LC4 can be easily integrated into SMT based modules due to its small size and 50 Ohm matched I/Os.
The HMC818LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 and 2.2 GHz. This amplifier is optimized to provide noise figure as low as 0.5 dB with up to 22 dB gain and +40 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external components required.
Wideband LNA Modules
The HMC-C059 is a GaAs MMIC pHEMT Low Noise Distributed Amplifier packaged in a miniature, hermetic connectorized module and operating between 1 and 12 GHz. The HMC-C059 provides up to 16 dB of gain, 1.8 dB noise figure, and up to +17 dBm P1dB output power.
High Speed Digital Logic Modules
Packaged in a connectorized module, the HMC-C062 is 1: 2 Fanout Buffer which supports data transmission rates up to 50 Gbps and clock frequencies as high as 30 GHz. The HMC-C062 is ideal for OC-768 and SDH STM-256 equipment, short, intermediate, and long haul optical transmitter modules, and broadband test and measurement applications. Inputs to the device are terminated with 50 Ohms to ground, and may be either AC or DC coupled. The differential outputs may be either AC or DC coupled. Propagation delay is typically 270 ps, while rise and fall times are less than 11 ps. The HMC-C062 operates from a -3.3V DC supply, exhibits 2 ps of deterministic jitter and consumes only 452 mW.
High Isolation Switch Modules
The HMC-C071 is a general purpose DC to 20 GHz high isolation non-reflective GaAs MESFET SP4T switch housed in a miniature hermetic module with field replaceable SMA connectors. The switch features >42 dB isolation up to 12 GHz, and > 32 dB isolation up to 20 GHz. Ideal for a wide range of applications from fiber optics to radar, the HMC-C071 also provides 2.8 dB of insertion loss up to 12 GHz, with 17 ns rise and fall times. A CMOS interface allows a single +5V bias voltage at only 1.4 mA.
Our Three Volume 2009 Designer's Guide Catalog is available as well as an updated June 2009 CD-ROM catalog detailing over 750 products. New literature including the June 2009 Product Selection Guide, Newsletter and CD-ROM can be obtained by visiting Hittite's booth #1007 at IMS 2009 or can be requested at www.hittite.com.
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.
SOURCE: Hittite Microwave Corporation