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| IMS2026 | Join us at the 2026 IEEE International MTT Symposia (IMS2026), 7-12 June in Boston, MA. Step into the future of microwave and RF innovation at the premier destination where the global community comes together to connect, collaborate, and stay ahead of the latest advancements. . |
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By John Oncea, Editor | The compound semiconductor market, including GaN, GaAs, and SiGe, is poised for substantial growth. This expansion is driven by advancements in telecommunications, defense, automotive, and consumer electronics, with each technology carving out its niche based on its unique strengths and applications. | |
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SPOTLIGHT ON GAN/GAAS/SIGE SOLUTIONS |
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| Wolfspeed RF GaN Meets 5G Demands On PA Design | Article | Wolfspeed, A Cree Company | Since creating the industry’s first GaN on SiC HEMT over two decades ago, Wolfspeed has enabled and driven the market by offering GaN on SiC products that effectively replace LDMOS parts in applications. |
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FEATURED PRODUCTS AND RESOURCES |
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GaN Power Amplifier | The APN319 from Northrop Grumman is a GaN power amplifier that operates from 47.2 to 51.4 GHz. It provides an output power of 7 W with a gain of 20 dB and Power Added Efficiency of 19%. | Download Datasheet | • Request Information | Northrop Grumman Microelectronic Products & Services | |
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