Datasheet | June 3, 2020

GaN Power Amplifier: APN319 Datasheet

Source: Northrop Grumman Microelectronic Products & Services

The APN319 GaNHEMT Power/Driver amplifier is a three-stage Single-ended power device, designed for use in 5G wireless and SatComTerminals. To ensure rugged and reliable operation, HEMT devices are fully passivated. Both bond pad and backside metallization are Au-based that is compatible with epoxy and eutectic die attach methods.

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