Newsletter | March 12, 2025

03.12.25 -- Optimizing RF Systems: Waveguides, Amplifiers, And GaN Technology

Understanding Rectangular And Double-Ridge Designs For Enhanced RF Systems

Explore rectangular and double-ridge waveguides, detailing their design, applications, and power-handling capabilities for efficient RF transmission in communications, radar, and scientific systems.

SSPA Vs. Tube And TWT Technology: Which Is Best?

The choice between SSPA and tube amplifiers depends on power and frequency needs. SSPAs offer reliability, efficiency, and compact size, while tubes remain essential for ultra-high-power applications.

Impact Of Drain Voltage On GaN RF Transistors And Safe Operating Area (SOA) Analysis

Increasing drain voltage in GaN RF transistors boosts power but risks thermal stress, reliability issues, and efficiency loss. SOA adherence and proper thermal management ensure longevity.

VSWR Conversion To Reflected Power

VSWR measures how efficiently RF power is transmitted through a load, with high VSWR indicating poor efficiency. Explore VSWR's relation to return loss, reflection coefficient, and mismatch loss.

Advantages Of GaN RF Amplifiers With High Peak-To-Average Capability

Explore how GaN RF amplifiers excel in high peak-to-average capability, offering improved efficiency and linearity over P1dB-rated amplifiers.

Pulse Amplifier Definitions And Terminology

Enhance your understanding of pulse amplifiers with this guide to key terminologies and specifications. Explore important concepts such as duty cycle, PRF, rise and fall times, ensuring optimal performance.

SOLUTIONS

10 kHz To 250 MHz, 2.5 KW High-Power Amplifier: AMP20162

The AMP20162 solid state high-power amplifier is designed for EMI/RFI testing, laboratory use, and general communication applications.

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1.0 To 6.0 GHz, 750 W High-Power Amplifier: AMP20160

The AMP20160 is a high-power, rack-mounted amplifier designed for EMI/RFI testing, laboratory use, and general communication applications.

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