Qorvo News
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Qorvo® Awarded Department Of Defense Advanced RF Gallium Nitride Program
6/15/2022
Qorvo® has been selected by the U.S. Department of Defense (DoD) to proceed with the Advanced Integration Interconnection and Fabrication Growth for Domestic State of the Art (SOTA) Radio Frequency Gallium Nitride (GaN) program, also known as STARRY NITE, as part of the Office of Undersecretary of Defense Research & Engineering's (OUSD R&E) microelectronics roadmap.
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Qorvo® Biotechnologies Receives FDA Emergency Use Authorization For Rapid COVID-19 Antigen Testing
4/13/2021
Qorvo® a leading provider of innovative radio frequency (RF) solutions that connect the world, today announced that the U.S. Food and Drug Administration (FDA) has granted emergency use authorization (EUA) for the Qorvo Omnia™ SARS-CoV-2 Antigen Test. The test is authorized for the qualitative detection of nucleocapsid viral antigens from SARS-CoV-2 in nasal swab specimens from individuals who are suspected of COVID-19.
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RFMW and Qorvo Cosponsor 2019 ARMMS Conference
5/9/2019
RFMW, Ltd. announces participation and sponsorship of the 2019 ARMMS Conference.
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U.S. Department Of Defense Expands Qorvo® Microelectronics Trusted Source Status
2/6/2017
Qorvo® recently earned continued Trusted Source Category 1A accreditation through 2018 from the U.S. Department of Defense (DoD). The company is one of only five accredited suppliers for both gallium nitride (GaN) and gallium arsenide (GaAs).
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Qorvo's New GaN On SiC PAs Achieve Breakthrough Performance And Flexibility
5/26/2016
Qorvo has announced the introduction of three new gallium nitride (GaN) power amplifiers (PAs) that achieve industry-leading power, power added efficiency (PAE) and gain at the IMS 2016. Qorvo's newest GaN PAs are optimized for use in military radar, communications and electronic warfare systems.
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Qorvo And Nanosemi Demo Ultra-Wideband Linearization For Massive MIMO Applications
5/24/2016
In conjunction with NanoSemi Inc of Waltham, MA, USA, Qorvo Inc. says that it has demonstrated industry-leading ultra-wideband linearization results with its gallium nitride (GaN) power amplifiers for wireless infrastructure. Using the QPA2705 integrated GaN driver and GaN Doherty power amplifier with NanoSemi's proprietary digital compensation algorithms, the two firms have achieved adjacent channel power ratio (ACPR) of -58dBc for a 60MHz signal bandwidth and 3x20MHz LTE carrier configuration, and -55dBc for a 100MHz signal bandwidth and 5x20MHz LTE carrier configuration.
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Qorvo Set To Double GaN Capacity
8/25/2015
Qorvo, Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers.
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Qorvo's New Plastic GaN Transistors Provide Cost Effective Radar And Communications System Solutions
5/20/2015
Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced a new family of input-matched gallium nitride (GaN) transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems.