Downloads
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750 V, 58 mohm SiC FET: UJ4C075060L8S
3/15/2024
The UJ4C075060L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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750 V, 44 mohm SiC FET: UJ4C075044L8S Datasheet
3/15/2024
The UJ4C075044L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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750 V, 44 mohm SiC FET: UJ4C075044L8S
3/15/2024
The UJ4C075044L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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Verify Networks To Be Prepared For Business-Critical Applications
3/15/2024
Dive into an overview of business-critical applications of private 5G networks and how passive and active network test solutions help verify network performance.
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750 V, 33 mohm SiC FET: UJ4C075033L8S Datasheet
3/14/2024
The UJ4C075033L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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750 V, 33 mohm SiC FET: UJ4C075033L8S
3/14/2024
The UJ4C075033L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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750 V, 23 mohm SiC FET: UJ4C075023L8S Datasheet
3/14/2024
The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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750 V, 23 mohm SiC FET: UJ4C075023L8S
3/14/2024
The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
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1.0 - 6.0 GHz 35 Watt GaN Power Amplifier: QPM0106
3/14/2024
The QPM0106 is a packaged, high-power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process that operates from 1.0 - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power.
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5 - 1218 MHz, 75 Ohm, 25 dB CATV Amplifier: QPL7425 Datasheet
3/14/2024
The QPL7425 is a GaAs pHEMT single-ended RF amplifier IC featuring 25 dB of flat gain and low noise designed to support HFC and Fiber to The Home (FTTH) applications from 5 to 1218 MHz.