Product/Service

30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S

Source: Cree, Inc.

Wolfspeed, A Cree Company, offers the new CGHV27030S unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz.

The CGHV27030S is capable of operation with either a 50 V or 28 V rail. It is also available in a 3 mm x 4 mm, surface mount, dual-flat-no-lead (DFN) package.

Additional features include:

  • 30 W Typical Output Power
  • 20 dB Gain at 5 W PAVE
  • -34 dBc ACLR at 5 W PAVE
  • 30% efficiency at 5 W PAVE

For more information on the CGHV27030S HEMT, download the datasheet.