Datasheet | June 16, 2017

30 W, DC - 6.0 GHz, GaN HEMT: CGHV27030S Datasheet

Source: Cree, Inc.

The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) with operation in the 700 - 960 MHz, 1200 - 1400 MHz, 1800 - 2200 MHz, and 3300 - 3700 MHz frequency ranges at both 50 V and 28 V. With features like high efficiency, high gain, and wide bandwidth capabilities, this transistor is ideal for telecommunications applications, as well as tactical communications applications from 20 - 2500 MHz. For more information on the CGHV27030S HEMT, download the datasheet.

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