Product/Service

RF Power Transistors: S-Band

Source: Microsemi Corporation
Microsemi has leveraged its industry-leading expertise in S-band RF power transistors to create a family of GaN-on-SiC solutions that are tailored to support the requirements of next-generation systems requiring higher power, better efficiency, and wider bandwidth than is possible using conventional silicon or SiC process technologies. For applications operating in frequency bands up to 20GHz, the wide bandgap material properties of GaN-on-SiC technology enable smaller systems with improved voltage, gain, broadband performance, drain efficiency, and long-term reliability.

2735GN – 100M RF Power Transistor
The 2735GN-100 RF Power Transistor is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF output power at 300µs pulse width, 10% duty factor across the 2700 to 3500 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for general purpose driver or S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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•Datasheet: 2735GN – 100M RF Power Transistor


2729GN – 270 RF Power Transistor
The 2729GN-270 RF Power Transistor is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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•Datasheet: 2729GN – 270 RF Power Transistor


2731GN – 200M RF Power Transistor
The 2731GN-200M RF Power Transistor is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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•Datasheet: 2731GN – 200M RF Power Transistor


2735GN – 35M RF Power Transistor
The 2735GN-35M RF Power Transistor is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 35 Watts of pulsed RF output power at 300µs pulse width, 10% duty factor across the 2700 to 3500 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for general purpose driver or S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

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•Datasheet: 2735GN – 35M RF Power Transistor