Datasheet: 2735GN - 35M RF Power Transistor

The 2735GN-35M RF Power Transistor is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 35 Watts of pulsed RF output power at 300µs pulse width, 10% duty factor across the 2700 to 3500 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for general purpose driver or S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.