Optimizing Wide-Bandgap Semiconductor Switches For EMI Compliance

EMI compliance is becoming a major concern for advanced power electronics due to increasing switching speeds. Correlated time-frequency measurements help optimize gate driving and minimize electromagnetic emissions early on during development.

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The use of wide-bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) enables high switching frequencies and steep rising edges, as well as high voltages. These characteristics enhance the efficiency of switching power supplies and make EMI compliance more challenging. Taking design guidelines for reduced EMI into account is just as important as testing and optimizing for EMI compliance in the development phase.