Molded Styled Power Amplifier: RWS05020-10

RFHIC, a manufacturer of active RF & MW components and hybrids with a heavy focus on GaN and GaAs technology, recently introduced a molded styled power amplifier (GaN on SiC) generating 20W and covering 20-1000MHz. RWS05020-10 is based on GaN on SiC Transistor, promising a solid reliability at high temperature; it provides a 36dB of Gain and a typical 43dBm @ P3dB with 50% efficiency. Moreover, the physical size of RWS05020-10 is only 2.1" x 1" x 0.5" which is much smaller than an Apple's new iPod nano or a typical business card.

GaN device is actively evolving, improving reliability while becoming more cost-effective. RFHIC have been developing more thermally robust designs, and the substrate material has been migrated from Si to SiC, enhancing reliability and efficiency. Nowadays, high efficiency directly translates to "Green" which is one of main concerns for policy makers and our end users. End users are also calling for smaller systems, of course, without sacrificing performance. Especially for sub L-band frequencies, there are many obstacles to overcome in order to make power amplifiers small.