Datasheet | February 24, 2010

Datasheet: Molded Styled Power Amplifier: RWS05020-10

Source: RFHIC

RFHIC, a manufacturer of active RF & MW components and hybrids with a heavy focus on GaN and GaAs technology, recently introduced a molded styled power amplifier (GaN on SiC) generating 20W and covering 20-1000MHz. RWS05020-10 is based on GaN on SiC Transistor, promising a solid reliability at high temperature; it provides a 36dB of Gain and a typical 43dBm @ P3dB with 50% efficiency. Moreover, the physical size of RWS05020-10 is only 2.1" x 1" x 0.5" which is much smaller than an Apple's new iPod nano or a typical business card.

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