Datasheet: Molded Styled Power Amplifier: RWS05020-10
Source: RFHIC
RFHIC, a manufacturer of active RF & MW components and hybrids with a heavy focus on GaN and GaAs technology, recently introduced a molded styled power amplifier (GaN on SiC) generating 20W and covering 20-1000MHz. RWS05020-10 is based on GaN on SiC Transistor, promising a solid reliability at high temperature; it provides a 36dB of Gain and a typical 43dBm @ P3dB with 50% efficiency. Moreover, the physical size of RWS05020-10 is only 2.1" x 1" x 0.5" which is much smaller than an Apple's new iPod nano or a typical business card.
access the Datasheet!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet
This website uses cookies to ensure you get the best experience on our website. Learn more