50 - 6000 MHz, 25 dBm Solid State High Power Amplifier: LNA70001 Datasheet

This wideband Class AB GaN power amplifier delivers robust RF performance across an expansive frequency range from 50 MHz to 6 GHz, supporting applications that span commercial wireless systems, broadband communications, lab environments, and defense technologies. Designed for single-channel modulation standards and continuous-wave operation, it provides a minimum output power of 25 dBm at P1dB with a minimum gain of 25 dB, ensuring strong and efficient signal amplification across the band.

With exceptional gain flatness of 3 dB p-p and low distortion performance, including typical IMD performance of –30 dBc at 15 dBm per tone, the amplifier maintains high signal fidelity in demanding linear applications. Built-in protection features—such as input over-power protection up to +8 dBm and unlimited load VSWR tolerance—provide superior ruggedness and reliability in challenging RF environments.

Powered by a 12 VDC supply with maximum current draw of 1 A, the amplifier integrates easily into existing RF systems, while its GaN architecture supports enhanced power density, efficiency, and thermal robustness compared to traditional technologies. Operating from –20 °C to +75 °C and qualified for high humidity environments up to 95% non-condensing, it is engineered for reliable field and lab deployment.

The compact 60 × 50 × 27 mm form factor with SMA connectors offers installation flexibility, and external heatsinking with forced-air cooling ensures stable long-term performance under load. With high reliability and rugged construction, this amplifier is an ideal choice for broadband test setups, communication systems, and advanced RF platforms requiring efficient, wide-range coverage and GaN-based linearity advantages.