This Class AB linear GaN amplifier is engineered for high-performance airborne and phased-array X-Band pulse applications, delivering a minimum peak pulse power of 1000 W across the 9.0–10.0 GHz frequency range.
It features high dynamic range, excellent gain flatness (≤3 dB p-p), and 60 dB minimum peak power gain, ensuring precise signal amplification. Pulse characteristics include 100 µs width, 10% duty cycle, 500 kHz PRF, 60 ns rise/fall time, and a maximum 0.8 dB droop.
Built-in protections enhance reliability and ruggedness, including thermal, load VSWR, pulse width, and duty cycle safeguards. The amplifier maintains low harmonic distortion (≤–35 dBc) and spurious output (≤–60 dBc). Input and output VSWR are tightly controlled (≤1.5:1 and ≤2:1, respectively), and input power is protected up to +5 dBm for short durations. Typical switching delay time is 2 µs, with 40 VDC nominal operation and 17 A average current at 10% duty cycle. Continuous load VSWR protection requires an output isolator.
Mechanically, the unit is compact and lightweight (250 × 175 × 50 mm, 4 kg), with external heatsink and forced-air cooling requirements. SMA-F input and WR90 or Type-N output connectors are provided. Environmental specifications include operation from –40 to +75 °C, storage to +85 °C, up to 95% non-condensing humidity, and altitudes up to 3000 meters, with shock and vibration tolerance suitable for normal transport. MIL-spec versions are available upon request. This amplifier combines high power, reliability, and robust environmental performance, making it ideal for demanding radar, communications, and electronic warfare systems.
