0.5 - 6.0 GHz, 150 W Solid State High Power Amplifier: AMP20110
Covering an ultra-wide 0.5–6.0 GHz frequency range, this high-performance GaN power amplifier delivers reliable, broadband performance across P, L, and S bands for EMI/RFI testing, laboratory validation, and CW or pulsed communication applications.
Built with advanced Class A/AB linear GaN devices, the system combines high efficiency with exceptional ruggedness in a compact, rack-mounted form factor suited for both bench and integrated test environments.
The amplifier provides a minimum of 150 W at Psat (CW or pulse) and 100 W minimum at P1dB, supported by 53 dB minimum gain with 0 dBm or less input for rated output power. Gain flatness of 4.0 dB p-p (typical) ensures stable performance across the full bandwidth, while a >20 dB adjustable gain range—accessible locally or remotely—offers flexible system control. Spectral integrity is maintained with typical two-tone IMD performance of <-30 dBc (42 dBm/tone, 1 MHz spacing), harmonics below -20 dBc at rated output, and non-harmonic spurious signals suppressed to -60 dBc maximum.
Designed for durability and operational confidence, the amplifier incorporates comprehensive protection and monitoring features. Input power protection up to +10 dBm, load VSWR protection to 4:1, and foldback at preset limits safeguard both the unit and connected devices. Operating from universal 100–240 VAC, 47–63 Hz power, it consumes a maximum of 1400 W at rated output. A local LCD display and flexible remote interfaces simplify configuration and monitoring, while an optional -50 dB sample port (N-Female) enables convenient output sampling for measurement and system integration.