GaN S-Band 50Ω Transistor: IGT2731L120

Source: Integra Technologies, Inc.

GaN S-Band 50Ω Transistor: IGT2731L120

Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.

The S-band transistor is an internally impedance matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.

Additional features include:

  • POUT-PK = 120W @ 40ms/50%/32V
  • Power Gain: 13.0 dB (typical)
  • Package Size: W=0.953″ (24.21mm), L=0.685″ (17.40mm)
  • 100% High Power RF Tested in Fixed Tuned RF Test Fixture

For more specifications on the GaN S-band 50Ω transistor, download the datasheet.