Integra Technologies introduces IGT2731L120 with GaN on SiC HEMT technology, exhibiting 13 dB typical gain, and 50% drain efficiency. This device is 100% high power RF tested in a 50Ω RF test fixture.
The S-band transistor is an internally impedance matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.
Additional features include:
For more specifications on the GaN S-band 50Ω transistor, download the datasheet.