GaN S-Band 50Ω Transistor: IGT2731L120 Datasheet
Source: Integra Technologies, Inc.
The IGT2731L120 is a transistor with GaN on SiC HEMT technology , exhibiting 13 dB typical gain, and 50% drain efficiency. This S-band transistor is an internally impedance matched device, and is included with depletion mode. For more specifications on the GaN S-band 50Ω transistor, download the datasheet.
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