Characterizing Parasitic Components In Power Converters

The use of wide-bandgap semiconductors like gallium nitride (GaN) and silicon carbide (SiC) in power converters is transforming power electronics due to their potential for high power density, low switching losses, and improved efficiency. However, these advanced transistors can be affected by parasitic components that occur at high frequencies. Parasitics, often caused by suboptimal layout practices at different levels such as chip, package, and PCB, are also influenced by passive components within the converter.
These hidden parasitics can degrade performance, especially affecting conducted emissions, and may require costly redesigns if not addressed early. It is essential to accurately characterize passive components using tools like LCR meters to identify and mitigate these parasitics. This white paper explores the nature of parasitics in capacitors, inductors, and resistors, explains the operation of LCR meters, and includes a practical demonstration using the R&S® LCX200 LCR meter.
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