500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B

Source: Integra Technologies, Inc.

500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B

Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.

The L-band transistor is an internal impedance pre-matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.

Additional features include:

  • POUT-PK = 500 W @ 2.0 ms/20%/50V
  • Power Gain: 12.0 dB (typical)
  • Package Size: W=1.176″ (29.87mm), L=0.540″ (13.72mm)
  • 100% high power RF tested in fixed tuned RF test fixture

For more specifications on the GaN L-band long-pulse transistor, download the datasheet.