Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.
The L-band transistor is an internal impedance pre-matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.
Additional features include:
For more specifications on the GaN L-band long-pulse transistor, download the datasheet.