The IGN1214L380 long-pulse transistor is designed with GaN on SiC HEMT technology and operates at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation. It is an internal impedance pre-matched device, and is included with depletion mode. For more specifications on the GaN L-band long-pulse transistor, download the datasheet.