1,500 Watt RF Power Transistor For UHF Pulsed Radar

Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.

Designated the Model 0405SC-1500M, the new device from Microsemi's RF Integrated Solutions group, utilizes state-of-the-art SiC technology to provide unparalleled 1,500W peak power performance in a compact single-ended package that replaces complex push-pull balun circuitry found in conventional silicon BJT or LDMOS solutions.

The 0405SC-1500M is a high performance, common gate, class AB, high power transistor designed for UHF frequencies from 406 to 450 MHz. It is built with 100% gold metallization and gold wires in a hermetically sealed package providing highest reliability for weather radar and over the horizon radar applications.