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1,500 Watt RF Power Transistor For UHF Pulsed Radar

Source: Microsemi Corporation

1,500 Watt RF Power Transistor For UHF Pulsed Radar
Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.

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Datasheet: 1,500 Watt RF Power Transistor For UHF Pulsed Radar

Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.

Designated the Model 0405SC-1500M, the new device from Microsemi's RF Integrated Solutions group, utilizes state-of-the-art SiC technology to provide unparalleled 1,500W peak power performance in a compact single-ended package that replaces complex push-pull balun circuitry found in conventional silicon BJT or LDMOS solutions.

The 0405SC-1500M is a high performance, common gate, class AB, high power transistor designed for UHF frequencies from 406 to 450 MHz. It is built with 100% gold metallization and gold wires in a hermetically sealed package providing highest reliability for weather radar and over the horizon radar applications.

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Datasheet: 1,500 Watt RF Power Transistor For UHF Pulsed Radar