Datasheet: 1,500 Watt RF Power Transistor For UHF Pulsed Radar

Microsemi Corporation recently introduced the new 1,500 watt RF power transistor for UHF pulsed radar applications, thus expanding its industry-leading portfolio of high power silicon carbide transistors.

Designated the Model 0405SC-1500M, the new device from Microsemi's RF Integrated Solutions group, utilizes state-of-the-art SiC technology to provide unparalleled 1,500W peak power performance in a compact single-ended package that replaces complex push-pull balun circuitry found in conventional silicon BJT or LDMOS solutions.