Gowanda’s portfolio of broadband microwave RF conical inductors are developed to address the need for higher performance from broadband conical components. They are ideal for use in communication applications for bias T’s, broadband chip manufacturing, communication platforms, high frequency, microwave circuitry, RF test set-ups, test and measurement, test gear, test instrumentation and transmission amplifier applications.
Gowanda expands their portfolio of broadband microwave RF conical inductors developed to address the need for higher performance from broadband conical components. They are ideal for use in communication applications for bias T’s, broadband chip manufacturing, communication platforms, high frequency, microwave circuitry, RF test set-ups, test and measurement, test gear, test instrumentation and transmission amplifier applications.
5G represents an exponential increase in technical complexity with challenges coming from 5G new radio (NR), massive multiple input multiple output (MIMO), millimeter-wave (mmWave) frequencies, and over-the-air (OTA) test methods. Device makers must effectively overcome these challenges to reach commercialization faster than the competition. This paper includes useful tips to help manufacturers accelerate time to market across the 5G workflow and reach first-to-market status.
The CGHV35120F is a GaN HEMT designed for high efficiency, high gain, and wide bandwidth capabilities for use in S-band radar amplifier applications operating in the 3.1 to 3.5 GHz range. Using GaN on SiC technology, the CGHV35120F is internally pre-matched on input with unmatched output.
Wolfspeed, a Cree Company, offers the CGHV35120F GaN HEMT designed for high efficiency, high gain, and wide bandwidth capabilities for use in S-band radar amplifier applications operating in the 3.1 to 3.5 GHz range.
S-parameter matching is used to maximize gain and gain flatness in simple linear RF/microwave amplifier designs. This same S-parameter data is used to develop matching networks that address amplifier stability. This paper discusses the importance of using modeling for basic S-parameter and stability analyses in the gallium nitride (GaN) power amplifier (PA) design process. It also focuses attention on a simple two-port stability analysis derived from linear S-parameter calculations. The nonlinear Qorvo GaN power transistor model from the Modelithics Qorvo GaN Library, in combination with simulation templates and Keysight Advanced Design System (ADS) software.
The JFW offers the 75P-223 solid state programmable attenuator for applications operating over the 5 to 2150 MHz range with 0 to 63.75 dB attenuation by 0.25 dB steps.
The JFW offers the 75P-223 solid state programmable attenuator for applications operating over the 5 to 2150 MHz range with 0 to 63.75 dB attenuation by 0.25 dB steps.
JFW offers the 75P-223 solid state programmable attenuator for applications operating over the 5 to 2150 MHz range with 0 to 63.75 dB attenuation by 0.25 dB steps.
The STC-75311405-10-C1 is a W-band down converter designed to convert mmWave signals from the frequency range of 75 to 110 GHz down to the baseband at 6 to 41 GHz. It is ideal for use in test lab, instrumentation, and auto test set applications.
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